 | | | |
| PartNumber | 2SA1163-BL(TE85L,F | 2SA1163-GR,LF | 2SA1163-BL,LF |
| Description | Bipolar Transistors - BJT PNP Trans -0.1A LN -120V VCEO | Bipolar Transistors - BJT 120V 100MA PNP TRANSISTOR | Bipolar Transistors - BJT Transistor for Low Freq. Amplification |
| Manufacturer | Toshiba | Toshiba | Toshiba |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | Y | Y |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | SOT-346-3 | - | TO-236-3 |
| Transistor Polarity | PNP | - | PNP |
| Configuration | Single | - | Single |
| Collector Emitter Voltage VCEO Max | - 120 V | - | - 120 V |
| Collector Base Voltage VCBO | - 120 V | - | - 120 V |
| Emitter Base Voltage VEBO | - 5 V | - | - 5 V |
| Collector Emitter Saturation Voltage | - 0.3 V | - | - 300 mV |
| Maximum DC Collector Current | - 100 mA | - | - |
| Gain Bandwidth Product fT | 100 MHz | - | 100 MHz |
| Series | 2SA1163 | 2SA1163 | 2SA1163 |
| DC Current Gain hFE Max | 700 | - | 700 |
| Packaging | Reel | Reel | Reel |
| Brand | Toshiba | Toshiba | Toshiba |
| Continuous Collector Current | - 100 mA | - | - |
| DC Collector/Base Gain hfe Min | 200 | - | 200 |
| Pd Power Dissipation | 150 mW | - | 150 mW |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | Transistors | Transistors | Transistors |
| Unit Weight | - | 0.000423 oz | 0.000423 oz |
| Technology | - | - | Si |
| Maximum Operating Temperature | - | - | + 125 C |
| निर्माता | भाग # | विवरण | RFQ |
|---|---|---|---|
Toshiba |
2SA1163-BL(TE85L,F | Bipolar Transistors - BJT PNP Trans -0.1A LN -120V VCEO | |
| 2SA1163-GR,LF | Bipolar Transistors - BJT 120V 100MA PNP TRANSISTOR | ||
| 2SA1163-BL,LF | Bipolar Transistors - BJT Transistor for Low Freq. Amplification | ||
| 2SA1163-GRTE85LF | Bipolar Transistors - BJT VCEO -120V Audio IC -100mA IB 10dB | ||
| 2SA1163-BL(TE85L,F | Bipolar Transistors - BJT PNP Trans -0.1A LN -120V VCEO | ||
| 2SA1163-GR,LF | TRANS PNP 120V 0.1A SMINI | ||
| 2SA1163-BL,LF | TRANS PNP 120V 0.1A S-MINI | ||
ON Semiconductor |
2SA1162YT1 | Bipolar Transistors - BJT 150mA 50V PNP | |
| 2SA1162YT1 | TRANS PNP 50V 0.15A SC-59 | ||
| 2SA1162Y(SY) | नयाँ र मौलिक | ||
| 2SA1163-BL | नयाँ र मौलिक | ||
| 2SA1163-GR | नयाँ र मौलिक | ||
| 2SA1163-GR(TE85L,F) | नयाँ र मौलिक | ||
| 2SA11737AKT146R | नयाँ र मौलिक | ||
| 2SA1175-A/JM | नयाँ र मौलिक | ||
| 2SA1175-F | नयाँ र मौलिक | ||
| 2SA1175/2SC2785 | नयाँ र मौलिक | ||
| 2SA11769AZE1 | नयाँ र मौलिक | ||
| 2SA11774TLR | नयाँ र मौलिक | ||
| 2SA1177E-SPA | नयाँ र मौलिक | ||
| 2SA1179-5-TB-E , QS5U17- | नयाँ र मौलिक | ||
| 2SA1179-M4 | नयाँ र मौलिक | ||
| 2SA1170 | नयाँ र मौलिक | ||
| 2SA1169 | नयाँ र मौलिक | ||
| 2SA1163-GRLFT | नयाँ र मौलिक | ||
| 2SA1163-BLLFCT-ND | नयाँ र मौलिक | ||
| 2SA1163-BLLFDKR-ND | नयाँ र मौलिक | ||
| 2SA1163-BLLFTR-ND | नयाँ र मौलिक | ||
| 2SA1163-GRLFCT-ND | नयाँ र मौलिक | ||
| 2SA1163-GRLFDKR-ND | नयाँ र मौलिक | ||
| 2SA1163-GRLFTR-ND | नयाँ र मौलिक | ||
| 2SA1162Y(TE85L,F) | GP BJT | ||
| 2SA1173-T1(PL) | Leaded (ship within 1day) | ||
| 2SA1163-GR(TE85L,F | BIP TR PNP 120V/0.1A SC59, PK | ||
| 2SA1162YTE85L | Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236 | ||
| 2SA1162YT5LM | नयाँ र मौलिक | ||
| 2SA1175-A | नयाँ र मौलिक | ||
| 2SA1163-GR(TE85R) | नयाँ र मौलिक | ||
| 2SA1163-GR(T5LNS,F | नयाँ र मौलिक | ||
| 2SA1163-BL(TE85L,F) | Trans GP BJT PNP 120V 0.1A 3-Pin S-Mini T/R | ||
| 2SA1173-T2 | नयाँ र मौलिक | ||
| 2SA1175 | नयाँ र मौलिक | ||
| 2SA1175-T | नयाँ र मौलिक | ||
| 2SA1179 | नयाँ र मौलिक | ||
| 2SA1179-5-TB-E | नयाँ र मौलिक | ||
| 2SA1179-M6-TA | नयाँ र मौलिक | ||
| 2SA1179M5 | नयाँ र मौलिक | ||
| 2SA1179M5-TA | नयाँ र मौलिक | ||
| 2SA1179M5-TB | 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR | ||
| 2SA1179-6-TB-E | - Bulk (Alt: 2SA1179-6-TB-E) |