![]() | ![]() | ||
| PartNumber | 2N6341G | 2N6341 | 2N6341G. |
| Description | Bipolar Transistors - BJT 25A 150V 200W NPN | Bipolar Transistors - BJT Power BJT | Transistor Polarity:NPN, Collector Emitter Voltage V(br)ceo:150V, Transition Frequency ft:40MHz, Power Dissipation Pd:200W, DC Collector Current:25A, DC Current Gain hFE:40hFE, No. of Pins:2Pins |
| Manufacturer | ON Semiconductor | Microchip | - |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
| RoHS | Y | N | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-204-2 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 150 V | - | - |
| Collector Base Voltage VCBO | 180 V | - | - |
| Emitter Base Voltage VEBO | 6 V | - | - |
| Collector Emitter Saturation Voltage | 1.8 V | - | - |
| Maximum DC Collector Current | 25 A | - | - |
| Gain Bandwidth Product fT | 40 MHz | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | 2N6341 | - | - |
| Height | 8.51 mm | - | - |
| Length | 39.37 mm | - | - |
| Packaging | Tray | Tray | - |
| Width | 26.67 mm | - | - |
| Brand | ON Semiconductor | Microchip / Microsemi | - |
| Continuous Collector Current | 25 A | - | - |
| DC Collector/Base Gain hfe Min | 50 | - | - |
| Pd Power Dissipation | 200 W | - | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 100 | 1 | - |
| Subcategory | Transistors | Transistors | - |
| Unit Weight | 0.056438 oz | - | - |