2N5191 stock, 2N5191, 2N5191G

2N5191G vs 2N5191 vs 2N5191G.


PartNumber	2N5191G	2N5191	2N5191G.
Description	Bipolar Transistors - BJT 4A 60V 40W NPN	Bipolar Transistors - BJT 4A 60V 40W NPN	Transistor Polarity:NPN, Collector Emitter Voltage V(br)ceo:60V, Transition Frequency ft:2MHz, Power Dissipation Pd:40W, DC Collector Current:4A, DC Current Gain hFE:2hFE, No. of Pins:3Pins, Op
Manufacturer	ON Semiconductor	ON Semiconductor	-
Product Category	Bipolar Transistors - BJT	Bipolar Transistors - BJT	-
RoHS	Y	N	-
Mounting Style	Through Hole	Through Hole	-
Package / Case	TO-225-3	TO-225-3	-
Transistor Polarity	NPN	NPN	-
Configuration	Single	Single	-
Collector Emitter Voltage VCEO Max	60 V	60 V	-
Collector Base Voltage VCBO	60 V	60 V	-
Emitter Base Voltage VEBO	5 V	5 V	-
Collector Emitter Saturation Voltage	1.4 V	1.4 V	-
Maximum DC Collector Current	4 A	4 A	-
Gain Bandwidth Product fT	2 MHz	2 MHz	-
Minimum Operating Temperature	- 65 C	- 65 C	-
Maximum Operating Temperature	+ 150 C	+ 150 C	-
Series	2N5191	-	-
Height	11.04 mm	11.04 mm (Max)	-
Length	7.74 mm	7.74 mm (Max)	-
Packaging	Bulk	Bulk	-
Width	2.66 mm	2.66 mm (Max)	-
Brand	ON Semiconductor	ON Semiconductor	-
Continuous Collector Current	4 A	4 A	-
DC Collector/Base Gain hfe Min	25	25	-
Pd Power Dissipation	40 W	40 W	-
Product Type	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors	-
Factory Pack Quantity	500	500	-
Subcategory	Transistors	Transistors	-
Unit Weight	0.028784 oz	0.068784 oz	-

Search Part Number : "2N5191", Match & Start with "2N5191" - Total : 5

निर्माता	भाग #	विवरण
	2N5191G	Bipolar Transistors - BJT 4A 60V 40W NPN
	2N5191G.	Transistor Polarity:NPN, Collector Emitter Voltage V(br)ceo:60V, Transition Frequency ft:2MHz, Power Dissipation Pd:40W, DC Collector Current:4A, DC Current Gain hFE:2hFE, No. of Pins:3Pins, Op
ON Semiconductor	2N5191	Bipolar Transistors - BJT 4A 60V 40W NPN
ON Semiconductor	2N5191G	TRANS NPN 60V 4A TO225AA
STMicroelectronics	2N5191	Bipolar Transistors - BJT NPN Power Switching