 |  | | |
| PartNumber | 2N4957UB | 2N4957UB/TR | 2N4957 |
| Description | Bipolar Transistors - BJT Small-Signal BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT BJTs |
| Manufacturer | Microchip | Microchip | Microchip |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | N | N | N |
| Packaging | Waffle | Reel | Foil Bag |
| Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 1 | 100 | 1 |
| Subcategory | Transistors | Transistors | Transistors |
| Technology | - | Si | - |
| Mounting Style | - | SMD/SMT | - |
| Package / Case | - | LCC-3 | - |
| Transistor Polarity | - | PNP | - |
| Configuration | - | Single | - |
| Collector Emitter Voltage VCEO Max | - | - 30 V | - |
| Collector Base Voltage VCBO | - | - 30 V | - |
| Emitter Base Voltage VEBO | - | - 3 V | - |
| Maximum DC Collector Current | - | - 30 mA | - |
| Minimum Operating Temperature | - | - 65 C | - |
| Maximum Operating Temperature | - | + 200 C | - |
| DC Current Gain hFE Max | - | 165 at - 5 mA, 10 V | - |
| DC Collector/Base Gain hfe Min | - | 10 at - 5 mA, 10 V | - |
| Pd Power Dissipation | - | 200 mW | - |
