| PartNumber | 2N3735 | 2N3735L | 2N3735/TR |
| Description | Bipolar Transistors - BJT . . | Bipolar Transistors - BJT Small-Signal BJT | Bipolar Transistors - BJT |
| Manufacturer | Central Semiconductor | Microchip | Microchip |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | N | N |
| Technology | Si | - | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-39-3 | TO-5-3 | TO-39-3 |
| Transistor Polarity | NPN | - | NPN |
| Configuration | Single | - | Single |
| Collector Emitter Voltage VCEO Max | 50 V | - | 40 V |
| Collector Base Voltage VCBO | 75 V | - | 75 V |
| Emitter Base Voltage VEBO | 5 V | - | 5 V |
| Collector Emitter Saturation Voltage | 200 mV | - | 0.9 V |
| Maximum DC Collector Current | 1.5 A | - | 1.5 A |
| Gain Bandwidth Product fT | 250 MHz | - | - |
| Minimum Operating Temperature | - 65 C | - | - 65 C |
| Maximum Operating Temperature | + 200 C | - | + 200 C |
| Series | 2N3735 | - | - |
| DC Current Gain hFE Max | 80 at 1 A, 1.5 V | - | 150 at 500 mA, 1 V |
| Packaging | Bulk | Tray | Reel |
| Brand | Central Semiconductor | Microchip / Microsemi | Microchip / Microsemi |
| DC Collector/Base Gain hfe Min | 20 at 1 A, 1.5 V | - | 20 at 1 A, 1.5 V |
| Pd Power Dissipation | 1 W | - | 1 W |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 500 | 1 | 100 |
| Subcategory | Transistors | Transistors | Transistors |
| Part # Aliases | 2N3735 PBFREE | - | - |
| Unit Weight | 0.035486 oz | - | - |