| PartNumber | 2N3501 | 2N3501L | 2N3501/TR |
| Description | Bipolar Transistors - BJT NPN Gen Pur SS | Bipolar Transistors - BJT Small-Signal BJT | Bipolar Transistors - BJT |
| Manufacturer | Central Semiconductor | Microchip | Microchip |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | N | N |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-39-3 | TO-39-3 | TO-39-3 |
| Transistor Polarity | NPN | - | NPN |
| Configuration | Single | - | Single |
| Collector Emitter Voltage VCEO Max | 150 V | - | 150 V |
| Collector Base Voltage VCBO | 150 V | - | 150 V |
| Emitter Base Voltage VEBO | 6 V | - | 6 V |
| Collector Emitter Saturation Voltage | 0.4 V | - | 0.4 V |
| Maximum DC Collector Current | 0.3 A | - | 300 mA |
| Gain Bandwidth Product fT | 150 MHz | - | - |
| Minimum Operating Temperature | - 65 C | - | - 65 C |
| Maximum Operating Temperature | + 150 C | - | + 200 C |
| Series | 2N3501 | - | - |
| DC Current Gain hFE Max | 300 | - | 300 at 150 mA, 10 V |
| Height | 6.6 mm | - | - |
| Length | 9.4 mm | - | - |
| Packaging | Bulk | Tray | Reel |
| Width | 9.4 mm | - | - |
| Brand | Central Semiconductor | Microchip / Microsemi | Microchip / Microsemi |
| Pd Power Dissipation | 1000 mW | - | 1 W |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 500 | 1 | 100 |
| Subcategory | Transistors | Transistors | Transistors |
| Part # Aliases | 2N3501 PBFREE | - | - |
| Unit Weight | 0.035486 oz | - | - |
| Technology | - | - | Si |
| DC Collector/Base Gain hfe Min | - | - | 20 at 300 mA, 10 V |