PartNumber | 2N2857 | 2N2857/TR | 2N2857UB |
Description | Bipolar Transistors - BJT NPN VHF/UHF AM | RF Bipolar Transistors | Bipolar Transistors - BJT Small-Signal BJT |
Manufacturer | Central Semiconductor | Microchip | Microchip |
Product Category | Bipolar Transistors - BJT | RF Bipolar Transistors | Bipolar Transistors - BJT |
RoHS | Y | N | N |
Mounting Style | Through Hole | Through Hole | SMD/SMT |
Package / Case | TO-72-3 | TO-72-4 | - |
Transistor Polarity | NPN | NPN | - |
Configuration | Single | Single | - |
Collector Emitter Voltage VCEO Max | 15 V | 15 V | - |
Collector Base Voltage VCBO | 30 V | - | - |
Emitter Base Voltage VEBO | 2.5 V | 3 V | - |
Collector Emitter Saturation Voltage | - | - | - |
Maximum DC Collector Current | 40 mA | 40 mA | - |
Gain Bandwidth Product fT | 1.9 GHz | - | - |
Minimum Operating Temperature | - 65 C | - 65 C | - |
Maximum Operating Temperature | + 200 C | + 200 C | - |
Series | 2N2857 | - | - |
DC Current Gain hFE Max | 150 | - | - |
Height | 5.33 mm | - | - |
Length | 5.84 mm | - | - |
Packaging | Bulk | Reel | Bulk |
Width | 5.84 mm | - | - |
Brand | Central Semiconductor | Microchip / Microsemi | Microchip / Microsemi |
Continuous Collector Current | 40 mA | 40 mA | - |
DC Collector/Base Gain hfe Min | 30 | 30 | - |
Pd Power Dissipation | 200 mW | 200 mW | - |
Product Type | BJTs - Bipolar Transistors | RF Bipolar Transistors | BJTs - Bipolar Transistors |
Factory Pack Quantity | 2000 | 100 | 100 |
Subcategory | Transistors | Transistors | Transistors |
Part # Aliases | 2N2857 PBFREE | - | - |
Unit Weight | 0.011365 oz | - | - |
Transistor Type | - | Bipolar | - |
Technology | - | Si | - |