 |  | | |
| PartNumber | 2DB1132R-13 | 2DB1132R | 2DB1132R-13-GIGA |
| Description | Bipolar Transistors - BJT 1000W -32Vceo | ||
| Manufacturer | DIODES | D | DIODES |
| Product Category | Transistors (BJT) - Single | Transistors (BJT) - Single | IC Chips |
| Series | 2DB11 | - | - |
| Packaging | Reel | - | - |
| Unit Weight | 0.001834 oz | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package Case | SOT-89 | - | - |
| Configuration | Single | - | - |
| Pd Power Dissipation | 1000 mW | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Collector Emitter Voltage VCEO Max | - 32 V | - | - |
| Transistor Polarity | PNP | - | - |
| Collector Emitter Saturation Voltage | - 125 mV | - | - |
| Collector Base Voltage VCBO | - 40 V | - | - |
| Emitter Base Voltage VEBO | - 5 V | - | - |
| Maximum DC Collector Current | - 1 A | - | - |
| Gain Bandwidth Product fT | 190 MHz | - | - |
| DC Collector Base Gain hfe Min | 180 at - 100 mA - 3 V | - | - |