UMB10NTN vs UMB10N vs UMB10N /B10

 
PartNumberUMB10NTNUMB10NUMB10N /B10
DescriptionBipolar Transistors - Pre-Biased DUAL PNP 50V 100MA SOT-363
ManufacturerROHM SemiconductorROHM-
Product CategoryBipolar Transistors - Pre-BiasedTransistors (BJT) - Arrays, Pre-Biased-
RoHSY--
ConfigurationDual--
Transistor PolarityPNP--
Typical Input Resistor2.2 kOhms--
Typical Resistor Ratio0.048--
Mounting StyleSMD/SMT--
Package / CaseSOT-363-6--
DC Collector/Base Gain hfe Min80--
Continuous Collector Current- 100 mA--
Peak DC Collector Current100 mA--
Pd Power Dissipation300 mW--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesUMB10N--
PackagingReel--
DC Current Gain hFE Max80--
Height0.9 mm--
Length2 mm--
Width1.25 mm--
BrandROHM Semiconductor--
Product TypeBJTs - Bipolar Transistors - Pre-Biased--
Factory Pack Quantity3000--
SubcategoryTransistors--
Part # AliasesUMB10N--
Unit Weight0.000265 oz--
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