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| PartNumber | TSM2NB60CH C5G | TSM2NB60CI C0 | TSM2NB60CH |
| Description | MOSFET 600V 2A N Channel Mosfet | MOSFET 600V 2A N Channel Mosfet | |
| Manufacturer | Taiwan Semiconductor | Taiwan Semiconductor | - |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-251-3 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 2 A | - | - |
| Rds On Drain Source Resistance | 3.9 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.5 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 9.4 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 44 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | Tube | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | Taiwan Semiconductor | - | - |
| Forward Transconductance Min | 1.5 S | - | - |
| Fall Time | 12.4 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 9.8 ns | - | - |
| Factory Pack Quantity | 1875 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 17.4 ns | - | - |
| Typical Turn On Delay Time | 9.1 ns | - | - |
| Unit Weight | 0.012102 oz | 0.211644 oz | - |
| Package Case | - | TO-220-3 | - |
| Id Continuous Drain Current | - | 1 A | - |
| Vds Drain Source Breakdown Voltage | - | 600 V | - |
| Rds On Drain Source Resistance | - | 4.4 Ohms | - |