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| PartNumber | STP16N50M2 | STP16N60M2 | STP16N06-TO220 |
| Description | MOSFET N-channel 500 V, 0.24 Ohm typ., 13 A MDmesh M2 Power MOSFET in a TO-220 package | MOSFET N-channel 600 V, 0.28 Ohm typ., 12 A MDmesh M2 Power MOSFET in TO-220 package | |
| Manufacturer | STMicroelectronics | STMicroelectronics | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-220-3 | TO-220-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 500 V | 600 V | - |
| Id Continuous Drain Current | 13 A | 12 A | - |
| Rds On Drain Source Resistance | 280 mOhms | 320 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 3 V | 4 V | - |
| Vgs Gate Source Voltage | 25 V | 25 V | - |
| Qg Gate Charge | 19.5 nC | 19 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 110 W | 110 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | MDmesh | MDmesh | - |
| Packaging | Tube | - | - |
| Series | STP16N50M2 | STP16N60M2 | - |
| Brand | STMicroelectronics | STMicroelectronics | - |
| Fall Time | 10 ns | 18.5 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 7.6 ns | 9.5 ns | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 32 ns | 58 ns | - |
| Typical Turn On Delay Time | 9.6 ns | 10.5 ns | - |
| Unit Weight | 0.011640 oz | 0.011640 oz | - |
| Height | - | 4.6 mm | - |
| Length | - | 15.75 mm | - |
| Product | - | Power MOSFET | - |
| Transistor Type | - | 1 N-Channel | - |
| Type | - | MDmesh M2 | - |
| Width | - | 10.4 mm | - |