 |  | | |
| PartNumber | STD2NK90Z-1 | STD2NK90Z | STD2NK90ZT |
| Description | MOSFET N-Ch, 900V-5ohms Zener SuperMESH 2.1A | ||
| Manufacturer | STMicroelectronics | - | STMicroelectronics |
| Product Category | MOSFET | - | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | Through Hole | - | SMD/SMT |
| Package / Case | TO-251-3 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 900 V | - | - |
| Id Continuous Drain Current | 2.1 A | - | - |
| Rds On Drain Source Resistance | 6.5 Ohms | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 70 W | - | - |
| Configuration | Single | - | Single |
| Channel Mode | Enhancement | - | Enhancement |
| Tradename | SuperMESH | - | - |
| Packaging | Tube | - | Digi-ReelR Alternate Packaging |
| Height | 6.2 mm | - | - |
| Length | 6.6 mm | - | - |
| Series | STD2NK90Z-1 | - | SuperMESH |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Width | 2.4 mm | - | - |
| Brand | STMicroelectronics | - | - |
| Fall Time | 40 ns | - | 40 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 11 ns | - | 11 ns |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 43 ns | - | 43 ns |
| Typical Turn On Delay Time | 21 ns | - | 21 ns |
| Unit Weight | 0.139332 oz | - | 0.139332 oz |
| Package Case | - | - | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | D-Pak |
| FET Type | - | - | MOSFET N-Channel, Metal Oxide |
| Power Max | - | - | 70W |
| Drain to Source Voltage Vdss | - | - | 900V |
| Input Capacitance Ciss Vds | - | - | 485pF @ 25V |
| FET Feature | - | - | Standard |
| Current Continuous Drain Id 25°C | - | - | 2.1A (Tc) |
| Rds On Max Id Vgs | - | - | 6.5 Ohm @ 1.05A, 10V |
| Vgs th Max Id | - | - | 4.5V @ 50μA |
| Gate Charge Qg Vgs | - | - | 27nC @ 10V |
| Pd Power Dissipation | - | - | 70 W |
| Vgs Gate Source Voltage | - | - | 30 V |
| Id Continuous Drain Current | - | - | 2.1 A |
| Vds Drain Source Breakdown Voltage | - | - | 900 V |
| Rds On Drain Source Resistance | - | - | 6.5 Ohms |
| Qg Gate Charge | - | - | 19.5 nC |
| Forward Transconductance Min | - | - | 2.3 S |