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| PartNumber | STD19N3LLH6AG | STD19NE06L | STD19NE06L1 |
| Description | MOSFET Automotive-grade N-channel 30 V, 25 mOhm typ, 10 A STripFET H6 Power MOSFET in a DPAK package | Power Field-Effect Transistor, 19A I(D), 60V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | Power Field-Effect Transistor, 19A I(D), 60V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA |
| Manufacturer | STMicroelectronics | ST | - |
| Product Category | MOSFET | IC Chips | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 10 A | - | - |
| Rds On Drain Source Resistance | 33 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 3.7 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 30 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | - | - |
| Tradename | STripFET | - | - |
| Packaging | Reel | - | - |
| Series | STD19N3LLH6AG | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | STMicroelectronics | - | - |
| Fall Time | 2.5 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 2.5 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 12.8 ns | - | - |
| Typical Turn On Delay Time | 2.4 ns | - | - |
| Unit Weight | 0.139332 oz | - | - |