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| PartNumber | SQD50P08-28_GE3 | SQD50P08-28-T4_GE3 | SQD50P08-28 |
| Description | MOSFET P-Channel 80V AEC-Q101 Qualified | MOSFET -80V Vds 20V Vgs TO-252 | |
| Manufacturer | Vishay | Vishay | Vishay / Siliconix |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | P-Channel | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 80 V | 80 V | - |
| Id Continuous Drain Current | 48 A | 48 A | - |
| Rds On Drain Source Resistance | 23 mOhms | 28 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 3.5 V | - 3.5 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 145 nC | 145 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 136 W | 136 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Tradename | TrenchFET | TrenchFET | TrenchFET |
| Packaging | Reel | - | Reel |
| Height | 2.38 mm | - | - |
| Length | 6.73 mm | - | - |
| Series | SQ | SQ | SQ Series |
| Transistor Type | 1 P-Channel | 1 P-Channel | - |
| Width | 6.22 mm | - | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Fall Time | 16 ns | 16 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 11 ns | 11 ns | - |
| Factory Pack Quantity | 2000 | 1 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 65 ns | 65 ns | - |
| Typical Turn On Delay Time | 15 ns | 15 ns | - |
| Unit Weight | 0.011993 oz | - | - |
| Forward Transconductance Min | - | 32 S | - |
| Vds Drain Source Breakdown Voltage | - | - | - 80 V |