SIR668ADP-T1-RE3 vs SIR668DP-T1-RE3 vs SIR668DP-T1-GE3

 
PartNumberSIR668ADP-T1-RE3SIR668DP-T1-RE3SIR668DP-T1-GE3
DescriptionMOSFET 100V Vds 20V Vgs PowerPAK SO-8MOSFET 100V Vds 20V Vgs PowerPAK SO-8
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePowerPAK-SO-8PowerPAK-SO-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage100 V100 V-
Id Continuous Drain Current93.6 A95 A-
Rds On Drain Source Resistance4 mOhms4 mOhms-
Vgs th Gate Source Threshold Voltage4 V2 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge54 nC108 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation104 W104 W-
ConfigurationSingleSingle-
TradenameTrenchFET, PowerPAKTrenchFET, PowerPAK-
PackagingReelReel-
SeriesSIRSIR-
BrandVishay / SiliconixVishay / Siliconix-
Fall Time10 ns28 ns-
Product TypeMOSFETMOSFET-
Rise Time18 ns25 ns-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time36 ns38 ns-
Typical Turn On Delay Time21 ns22 ns-
Channel Mode-Enhancement-
Transistor Type-1 N-Channel-
Forward Transconductance Min-85 S-
Unit Weight-0.017870 oz-
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