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| PartNumber | SIA421DJ-T1-GE3 | SIA425EDJ-T1-GE3 | SIA421DJ-T1-GE3-CUT TAPE |
| Description | MOSFET -30V Vds 20V Vgs PowerPAK SC-70 | IGBT Transistors MOSFET 20V 4.5A 15.6W 60mOhms @ 4.5V | |
| Manufacturer | Vishay | VISHAY | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SC-70-6 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 12 A | - | - |
| Rds On Drain Source Resistance | 35 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.5 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 19 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 19 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | TrenchFET, PowerPAK | - | - |
| Packaging | Reel | Reel | - |
| Series | SIA | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 15 S | - | - |
| Fall Time | 10 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 12 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 30 ns | - | - |
| Typical Turn On Delay Time | 10 ns | - | - |
| Part # Aliases | SIA421DJ-GE3 | - | - |
| Part Aliases | - | SIA425EDJ-GE3 | - |
| Package Case | - | PowerPAK-SC-70-6 | - |
| Pd Power Dissipation | - | 15.6 W | - |
| Vgs Gate Source Voltage | - | 12 V | - |
| Id Continuous Drain Current | - | - 4.5 A | - |
| Vds Drain Source Breakdown Voltage | - | - 20 V | - |
| Rds On Drain Source Resistance | - | 60 mOhms | - |