RGT30NL65DGTL vs RGT30NS65DGC9 vs RGT30NS65D

 
PartNumberRGT30NL65DGTLRGT30NS65DGC9RGT30NS65D
DescriptionIGBT Transistors FIELD STOP TRENCH IGBTIGBT Transistors IGBT HIGH VOLT AND CURRENT APROHRGT30NS65D (Alt: RGT30NS65D)
ManufacturerROHM SemiconductorROHM Semiconductor-
Product CategoryIGBT TransistorsIGBT Transistors-
RoHSYY-
TechnologySiSi-
Package / CaseTO-263L-3TO-262-3-
Mounting StyleSMD/SMTThrough Hole-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max650 V650 V-
Collector Emitter Saturation Voltage1.65 V1.65 V-
Maximum Gate Emitter Voltage30 V30 V-
Continuous Collector Current at 25 C30 A30 A-
Pd Power Dissipation133 W133 W-
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 175 C+ 175 C-
PackagingReelTube-
BrandROHM SemiconductorROHM Semiconductor-
Gate Emitter Leakage Current200 nA200 nA-
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity100050-
SubcategoryIGBTsIGBTs-
Part # AliasesRGT30NL65DRGT30NS65D(TO-262)-
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