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| PartNumber | R6006ANX | R6006ANDTL | R6006AND |
| Description | MOSFET 10V DRIVE NCH MOSFET | MOSFET LO CURR HI EFF MOSFT HI BREAKDWN RESIST | |
| Manufacturer | ROHM Semiconductor | ROHM Semiconductor | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | SMD/SMT | - |
| Package / Case | TO-220FP-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V | - |
| Id Continuous Drain Current | 6 A | 6 A | - |
| Rds On Drain Source Resistance | 1.2 Ohms | 900 mOhms | - |
| Vgs Gate Source Voltage | 30 V | 30 V | - |
| Qg Gate Charge | 15 nC | 15 nC | - |
| Pd Power Dissipation | 40 W | 40 W | - |
| Configuration | Single | Single | - |
| Packaging | Bulk | Reel | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | ROHM Semiconductor | ROHM Semiconductor | - |
| Forward Transconductance Min | 1.7 S | 1.7 S | - |
| Fall Time | 35 ns | 35 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 18 ns | 36 ns | - |
| Factory Pack Quantity | 500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 50 ns | 50 ns | - |
| Typical Turn On Delay Time | 22 ns | 22 ns | - |
| Part # Aliases | R6006ANX | R6006AND | - |
| Unit Weight | 0.211644 oz | 0.011993 oz | - |
| Vgs th Gate Source Threshold Voltage | - | 2.5 V | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Channel Mode | - | Enhancement | - |