PMP5501QASZ vs PMP5501G115 vs PMP5501G,135

 
PartNumberPMP5501QASZPMP5501G115PMP5501G,135
DescriptionBipolar Transistors - BJT PMP5501QAS/SOT1216/DFN1010B-6Now Nexperia PMP5501G - Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 2-Element, PNP, Silicon, UMT5Bipolar Transistors - BJT MATCHED PAIR
ManufacturerNexperia-NXP Semiconductors
Product CategoryBipolar Transistors - BJT-Transistors (BJT) - Arrays
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseDFN-1010B-6--
Transistor PolarityPNP--
ConfigurationDual--
Collector Emitter Voltage VCEO Max- 45 V--
Collector Base Voltage VCBO- 50 V--
Emitter Base Voltage VEBO- 6 V--
Collector Emitter Saturation Voltage- 200 mV--
Maximum DC Collector Current- 100 mA--
Gain Bandwidth Product fT175 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
DC Current Gain hFE Max0.95--
PackagingReel-Tape & Reel (TR) Alternate Packaging
BrandNexperia--
Continuous Collector Current- 100 mA--
DC Collector/Base Gain hfe Min1.05--
Pd Power Dissipation350 mW--
Product TypeBJTs - Bipolar Transistors--
QualificationAEC-Q101--
Factory Pack Quantity5000--
SubcategoryTransistors--
Series---
Package Case--5-TSSOP, SC-70-5, SOT-353
Mounting Type--Surface Mount
Supplier Device Package--5-TSSOP
Power Max--300mW
Transistor Type--2 PNP (Dual) Matched Pair, Common Emitter
Current Collector Ic Max--100mA
Voltage Collector Emitter Breakdown Max--45V
DC Current Gain hFE Min Ic Vce--200 @ 2mA, 5V
Vce Saturation Max Ib Ic--400mV @ 5mA, 100mA
Current Collector Cutoff Max--15nA (ICBO)
Frequency Transition--175MHz
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