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| PartNumber | MRFX035HR5 | MRFX1K80GNR5 | MRFX1K80H |
| Description | RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 35 W CW over 1.8-512 MHz, 65 V | RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 1800 W CW over 1.8-400 MHz, 65 V | PHSMRFX1K80H (Alt: MRFX1K80H) |
| Manufacturer | NXP | NXP | - |
| Product Category | RF MOSFET Transistors | RF MOSFET Transistors | - |
| RoHS | Y | Y | - |
| Transistor Polarity | N-Channel | Dual N-Channel | - |
| Technology | Si | Si | - |
| Id Continuous Drain Current | 100 mA | 43 A | - |
| Vds Drain Source Breakdown Voltage | 193 V | - 500 mV, 179 V | - |
| Gain | 24.8 dB | 24.4 dB | - |
| Output Power | 35 W | 1.8 kW | - |
| Minimum Operating Temperature | - 40 C | - 40 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Mounting Style | Screw Mount | SMD/SMT | - |
| Package / Case | NI-360H-2SB | OM-1230G-4L | - |
| Packaging | Reel | Reel | - |
| Operating Frequency | 1.8 MHz to 512 MHz | 1.8 MHz to 400 MHz | - |
| Series | MRFX035H | MRFX1K80 | - |
| Type | RF Power MOSFET | RF Power MOSFET | - |
| Brand | NXP Semiconductors | NXP Semiconductors | - |
| Number of Channels | 1 Channel | 2 Channel | - |
| Pd Power Dissipation | 154 W | 3333 W | - |
| Product Type | RF MOSFET Transistors | RF MOSFET Transistors | - |
| Factory Pack Quantity | 50 | 50 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Vgs Gate Source Voltage | - 6 V, 10 V | - 6 V, 10 V | - |
| Vgs th Gate Source Threshold Voltage | 1.7 V | 2.1 V | - |
| Part # Aliases | 935376627178 | 935362677578 | - |
| Forward Transconductance Min | - | 44.7 S | - |
| Moisture Sensitive | - | Yes | - |