MCH6421-TL-E vs MCH6421-TL-W vs MCH642

 
PartNumberMCH6421-TL-EMCH6421-TL-WMCH642
DescriptionMOSFET NCH 1.8V DRIVE SERIESMOSFET NCH 1.8V Power MOSFE
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSOT-363-6SOT-363-6-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage20 V20 V-
Id Continuous Drain Current5.5 A5.5 A-
Rds On Drain Source Resistance38 mOhms99 mOhms-
Vgs Gate Source Voltage12 V12 V-
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation1.5 W1.5 W-
ConfigurationSingleSingleSingle
PackagingReelReelReel
SeriesMCH6421-MCH6421
Transistor Type1 N-Channel-1 N-Channel
BrandON SemiconductorON Semiconductor-
Product TypeMOSFETMOSFET-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Unit Weight0.000265 oz0.000265 oz0.000265 oz
Vgs th Gate Source Threshold Voltage-400 mV-
Qg Gate Charge-5.1 nC-
Channel Mode-Enhancement-
Forward Transconductance Min-2 S-
Fall Time-32 ns-
Rise Time-26 ns-
Typical Turn Off Delay Time-38 ns-
Typical Turn On Delay Time-7.5 ns-
Package Case--SOT-363-6
Pd Power Dissipation--1.5 W
Vgs Gate Source Voltage--12 V
Id Continuous Drain Current--5.5 A
Vds Drain Source Breakdown Voltage--20 V
Rds On Drain Source Resistance--38 mOhms
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