IXTA4N65X2 vs IXTA4N150HV vs IXTA4N60P

 
PartNumberIXTA4N65X2IXTA4N150HVIXTA4N60P
DescriptionMOSFET DISCMSFT NCHULTRAJNCTN X2CLASSMOSFET DISCMOSFET N-CH STD-HIVOLTAGEMOSFET 4.0 Amps 600 V 1.9 Ohm Rds
ManufacturerIXYSIXYSIXYS
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-263-3TO-263HV-2-
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage650 V1.5 kV-
Id Continuous Drain Current4 A4 A-
Rds On Drain Source Resistance850 mOhms4 mOhms-
Vgs th Gate Source Threshold Voltage3 V2.5 V-
Vgs Gate Source Voltage30 V30 V-
Qg Gate Charge8.3 nC375 nC-
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation80 W280 W-
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
TradenameHiPerFET--
PackagingTubeTubeTube
SeriesX2-Class-IXTA4N60
BrandIXYSIXYS-
Forward Transconductance Min2.5 S--
Fall Time25 ns13 ns20 ns
Product TypeMOSFETMOSFET-
Rise Time28 ns43 ns10 ns
Factory Pack Quantity5050-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time57 ns184 ns50 ns
Typical Turn On Delay Time22 ns44 ns25 ns
Unit Weight0.068654 oz-0.056438 oz
Number of Channels-1 Channel1 Channel
Transistor Type-1 N-Channel1 N-Channel
Package Case--TO-252-3
Pd Power Dissipation--89 W
Vgs Gate Source Voltage--30 V
Id Continuous Drain Current--4 A
Vds Drain Source Breakdown Voltage--600 V
Rds On Drain Source Resistance--2 Ohms
Forward Transconductance Min--4.6 S
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