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| PartNumber | IRF640 | IRF640,127 | IRF640 IRF640B IRF640N |
| Description | MOSFET N-Ch 200 Volt 18 Amp | MOSFET N-CH 200V 16A TO220AB | |
| Manufacturer | STMicroelectronics | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 200 V | - | - |
| Id Continuous Drain Current | 18 A | - | - |
| Rds On Drain Source Resistance | 180 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 125 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Height | 9.15 mm | - | - |
| Length | 10.4 mm | - | - |
| Series | IRF640 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | MOSFET | - | - |
| Width | 4.6 mm | - | - |
| Brand | STMicroelectronics | - | - |
| Forward Transconductance Min | 11 S | - | - |
| Fall Time | 25 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 27 ns | - | - |
| Factory Pack Quantity | 50 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn On Delay Time | 13 ns | - | - |
| Unit Weight | 0.011640 oz | - | - |