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| PartNumber | IRF610SPBF | IRF610S | IRF610S2497 |
| Description | MOSFET N-CH 200V HEXFET MOSFET D2-PA | MOSFET RECOMMENDED ALT 844-IRF610SPBF | |
| Manufacturer | Vishay | Vishay | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | E | N | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-263-3 | TO-263-3 | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 200 V | - | - |
| Id Continuous Drain Current | 3.3 A | - | - |
| Rds On Drain Source Resistance | 1.5 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 8.2 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 36 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | Tube | - |
| Series | IRF | IRF | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Forward Transconductance Min | 0.8 S | - | - |
| Fall Time | 8.9 ns | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 17 ns | - | - |
| Factory Pack Quantity | 1000 | 50 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 14 ns | - | - |
| Typical Turn On Delay Time | 8.2 ns | - | - |
| Unit Weight | 0.050717 oz | 0.050717 oz | - |
| Height | - | 4.83 mm | - |
| Length | - | 10.67 mm | - |
| Width | - | 9.65 mm | - |