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| PartNumber | IPG20N10S436AATMA1 | IPG20N10S4L-22 | IPG20N10S436AATMA1-CUT TAPE |
| Description | MOSFET N-CHANNEL 100+ | MOSFET MOSFET | |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TDSON-8 | TDSON-8 | - |
| Number of Channels | 1 Channel | 2 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | - |
| Id Continuous Drain Current | 20 A | 20 A | - |
| Rds On Drain Source Resistance | 31 mOhms, 31 mOhms | 20 mOhms, 20 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2.7 V | 1.1 V | - |
| Vgs Gate Source Voltage | 20 V | 16 V | - |
| Qg Gate Charge | 9.4 nC | 27 nC, 27 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 43 W | 60 W | - |
| Configuration | Single | Dual | - |
| Channel Mode | Enhancement | Enhancement | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Packaging | Reel | Reel | - |
| Height | 1.27 mm | 1.27 mm | - |
| Length | 5.9 mm | 5.9 mm | - |
| Transistor Type | 1 N-Channel | 2 N-Channel | - |
| Width | 5.15 mm | 5.15 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Forward Transconductance Min | - | - | - |
| Fall Time | 4 ns | 18 ns, 18 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 3 ns | 3 ns, 3 ns | - |
| Factory Pack Quantity | 5000 | 5000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 3 ns | 30 ns, 30 ns | - |
| Typical Turn On Delay Time | 1 ns | 5 ns, 5ns | - |
| Part # Aliases | IPG20N10S4-36A SP001102930 | IPG20N10S4L22ATMA1 IPG2N1S4L22XT SP000866570 | - |
| Series | - | XPG20N10 | - |