PartNumber | IPD60R380C6 | IPD60R380C6 6R380C6 | IPD60R380C6,6R6380 |
Description | MOSFET N-Ch 600V 10.6A DPAK-2 | ||
Manufacturer | Infineon | - | - |
Product Category | MOSFET | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | PG-TO-252-3 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 600 V | - | - |
Id Continuous Drain Current | 10.6 A | - | - |
Rds On Drain Source Resistance | 380 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 2.5 V | - | - |
Vgs Gate Source Voltage | 10 V | - | - |
Qg Gate Charge | 32 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 83 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Tradename | CoolMOS | - | - |
Packaging | Reel | - | - |
Height | 2.3 mm | - | - |
Length | 6.5 mm | - | - |
Series | XPD60R380 | - | - |
Transistor Type | 1 N-Channel | - | - |
Type | 600 V CoolMOS C6 Power Transistor | - | - |
Width | 6.22 mm | - | - |
Brand | Infineon Technologies | - | - |
Fall Time | 9 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 10 ns | - | - |
Factory Pack Quantity | 2500 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 110 ns | - | - |
Typical Turn On Delay Time | 15 ns | - | - |
Part # Aliases | IPD60R380C6ATMA1 SP001117716 | - | - |
Unit Weight | 0.139332 oz | - | - |