IPA126N10N3 G vs IPA126N10N(126N10N) vs IPA126N10N3

 
PartNumberIPA126N10N3 GIPA126N10N(126N10N)IPA126N10N3
DescriptionMOSFET N-Ch 100V 35A TO220FP-3 OptiMOS 3
ManufacturerInfineon-Infineon Technologies
Product CategoryMOSFET-Transistors - FETs, MOSFETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleThrough Hole-Through Hole
Package / CaseTO-220FP-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current35 A--
Rds On Drain Source Resistance12.6 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge9 nC--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 175 C-+ 175 C
Pd Power Dissipation33 W--
ConfigurationSingle-Single
Channel ModeEnhancement-Enhancement
TradenameOptiMOS-OptiMOS
PackagingTube-Tube
Height16.15 mm--
Length10.65 mm--
SeriesOptiMOS 3-OptiMOS 3
Transistor Type1 N-Channel-1 N-Channel
Width4.85 mm--
BrandInfineon Technologies--
Fall Time4 ns-4 ns
Product TypeMOSFET--
Rise Time6 ns-6 ns
Factory Pack Quantity500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time20 ns-20 ns
Typical Turn On Delay Time12 ns-12 ns
Part # AliasesIPA126N10N3GXKSA1 IPA126N1N3GXK SP000485964--
Unit Weight0.211644 oz-0.211644 oz
Part Aliases--IPA126N10N3GXK IPA126N10N3GXKSA1 SP000485964
Package Case--TO-220-3
Pd Power Dissipation--33 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--35 A
Vds Drain Source Breakdown Voltage--100 V
Rds On Drain Source Resistance--12.6 mOhms
Qg Gate Charge--9 nC
Top