IKD04N60RFATMA1 vs IKD04N60RFAATMA1 vs IKD04N60RFA

 
PartNumberIKD04N60RFATMA1IKD04N60RFAATMA1IKD04N60RFA
DescriptionIGBT Transistors IGBT w/ INTG DIODE 600V 8AIGBT Transistors IGBT PRODUCTS
ManufacturerInfineonInfineonInfineon Technologies
Product CategoryIGBT TransistorsIGBT TransistorsIGBTs - Single
RoHSY--
TechnologySiSi-
Package / CaseTO-252-3TO-252-3-
Mounting StyleSMD/SMTSMD/SMT-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max600 V600 V-
Collector Emitter Saturation Voltage2.2 V2.2 V-
Maximum Gate Emitter Voltage20 V20 V-
Continuous Collector Current at 25 C8 A8 A-
Pd Power Dissipation75 W75 W-
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 175 C+ 175 C-
SeriesRCRCAutomotive, AEC-Q101, TrenchStop
PackagingReelReelTape & Reel (TR)
Height2.41 mm--
Length6.73 mm--
Width6.22 mm--
BrandInfineon TechnologiesInfineon Technologies-
Gate Emitter Leakage Current100 nA100 nA-
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity25002500-
SubcategoryIGBTsIGBTs-
TradenameTRENCHSTOPTRENCHSTOP-
Part # AliasesIKD04N60RF SP000942932IKD04N60RFA SP001205240-
Part Aliases--IKD04N60RFA SP001205240
Package Case--TO-252-3, DPak (2 Leads + Tab), SC-63
Input Type--Standard
Mounting Type--Surface Mount
Supplier Device Package--PG-TO252-3
Power Max--75W
Reverse Recovery Time trr--34ns
Current Collector Ic Max--8A
Voltage Collector Emitter Breakdown Max--600V
IGBT Type--Trench
Current Collector Pulsed Icm--12A
Vce on Max Vge Ic--2.5V @ 15V, 4A
Switching Energy--60μJ (on), 50μJ (off)
Gate Charge--27nC
Td on off 25°C--12ns/116ns
Test Condition--400V, 4A, 43 Ohm, 15V
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