IGW30N60H3 vs IGW30N60 vs IGW30N60H3 G30H603

 
PartNumberIGW30N60H3IGW30N60IGW30N60H3 G30H603
DescriptionIGBT Transistors 600V HI SPEED SW IGBT
ManufacturerInfineonINFINEON-
Product CategoryIGBT TransistorsIGBTs - Single-
RoHSY--
TechnologySi--
Package / CaseTO-247-3--
Mounting StyleThrough HoleThrough Hole-
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage1.95 V2.4 V-
Maximum Gate Emitter Voltage20 V20 V-
Continuous Collector Current at 25 C60 A60 A-
Pd Power Dissipation187 W--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 175 C--
SeriesHighSpeed 3IGW30N60-
PackagingTubeTube-
BrandInfineon Technologies--
Gate Emitter Leakage Current100 nA100 nA-
Product TypeIGBT Transistors--
Factory Pack Quantity240--
SubcategoryIGBTs--
TradenameTRENCHSTOP--
Part # AliasesIGW30N60H3FKSA1 IGW3N6H3XK SP000852242--
Unit Weight0.014110 oz--
Part Aliases-IGW30N60H3FKSA1 IGW30N60H3XK SP000852242-
Package Case-PG-TO-247-3-
Pd Power Dissipation-187 W-
Collector Emitter Voltage VCEO Max-600 V-
Continuous Collector Current Ic Max-30 A-
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