FQD3P50TM vs FQD3P50TF vs FQD3P50TM-AM002BLT


PartNumber	FQD3P50TM	FQD3P50TF	FQD3P50TM-AM002BLT
Description	MOSFET 500V P-Channel QFET	MOSFET 500V P-Channel QFET	MOSFET P-CH/500V/2.1A 4.9OHM
Manufacturer	ON Semiconductor	ON Semiconductor	ON Semiconductor
Product Category	MOSFET	MOSFET	MOSFET
RoHS	E	E	Y
Technology	Si	Si	Si
Mounting Style	SMD/SMT	SMD/SMT	SMD/SMT
Package / Case	DIE	TO-252-3	TO-252-3
Number of Channels	1 Channel	1 Channel	1 Channel
Transistor Polarity	P-Channel	P-Channel	P-Channel
Vds Drain Source Breakdown Voltage	500 V	500 V	500 V
Id Continuous Drain Current	2.1 A	2.1 A	2.1 A
Rds On Drain Source Resistance	4.9 Ohms	4.9 Ohms	3.9 Ohms
Vgs Gate Source Voltage	30 V	30 V	30 V
Minimum Operating Temperature	- 55 C	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C	+ 150 C
Pd Power Dissipation	2.5 W	2.5 W	50 W
Configuration	Single	Single	Single
Channel Mode	Enhancement	Enhancement	Enhancement
Tradename	QFET	-	-
Packaging	Reel	Reel	Reel
Height	2.3 mm	2.39 mm	2.39 mm
Length	6.6 mm	6.73 mm	6.73 mm
Series	FQD3P50	-	FQD3P50
Transistor Type	1 P-Channel	1 P-Channel	1 P-Channel
Type	MOSFET	MOSFET	-
Width	6.1 mm	6.22 mm	6.22 mm
Brand	ON Semiconductor / Fairchild	ON Semiconductor / Fairchild	ON Semiconductor / Fairchild
Forward Transconductance Min	2.1 S	2.1 S	2.1 S
Fall Time	45 ns	45 ns	45 ns
Product Type	MOSFET	MOSFET	MOSFET
Rise Time	56 ns	56 ns	56 ns
Factory Pack Quantity	2500	2000	2500
Subcategory	MOSFETs	MOSFETs	MOSFETs
Typical Turn Off Delay Time	35 ns	35 ns	35 ns
Typical Turn On Delay Time	12 ns	12 ns	12 ns
Unit Weight	0.009184 oz	0.139332 oz	0.011993 oz
Vgs th Gate Source Threshold Voltage	-	-	5 V
Qg Gate Charge	-	-	23 nC
Part # Aliases	-	-	FQD3P50TM_AM002BLT