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CGHV60040D vs CGHV60040D-GP4 vs CGHV60075D

 
PartNumberCGHV60040DCGHV60040D-GP4CGHV60075D
DescriptionRF JFET Transistors GaN HEMT Die DC-6.0GHz, 40 WattRF MOSFET HEMT 50V DIERF JFET Transistors 6.0GHz 75 Watt GaN Gain 17dB typ. 50V
ManufacturerCree, Inc.-Wolfspeed / Cree
Product CategoryRF JFET Transistors-Transistors - FETs, MOSFETs - Single
RoHSY--
Transistor TypeHEMT-HEMT
TechnologyGaN-GaN SiC
Gain18 dB-17 dB
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage50 V--
Vgs Gate Source Breakdown Voltage---
Id Continuous Drain Current3.2 A--
Output Power40 W-75 W
Maximum Drain Gate Voltage---
Minimum Operating Temperature---
Maximum Operating Temperature---
Pd Power Dissipation---
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseDie--
PackagingGel Pack-Gel Pack
Application---
ConfigurationDual--
Height100 um--
Length1800 um--
Operating Frequency6 GHz-6 GHz
Operating Temperature Range---
ProductGaN HEMT--
Width820 um--
BrandWolfspeed / Cree--
Forward Transconductance Min---
Gate Source Cutoff Voltage---
Number of Channels2 Channel--
Class---
Development Kit---
Fall Time---
NF Noise Figure---
P1dB Compression Point---
Product TypeRF JFET Transistors--
Rds On Drain Source Resistance---
Rise Time---
Factory Pack Quantity10--
SubcategoryTransistors--
Typical Turn Off Delay Time---
Vgs th Gate Source Threshold Voltage---
Part # AliasesCGHV60040D-GP4--
Package Case--Die
Pd Power Dissipation--41.6 W
Id Continuous Drain Current--10 A
Vds Drain Source Breakdown Voltage--150 V
Vgs th Gate Source Threshold Voltage--- 10 V + 2 V
Rds On Drain Source Resistance--0.28 Ohm
Forward Transconductance Min---
Vgs Gate Source Breakdown Voltage--150 V
NF Noise Figure---
P1dB Compression Point---
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