PartNumber | BSM180C12P2E202 | BSM180C12P2E202-EDEM3 | BSM180C12P3C202 |
Description | Discrete Semiconductor Modules 1200V Vdss; 204A ID SiC Mod; SICSTD02 | SiC-N-Ch/SBD 1200V 180A 880W C-Pack | |
Manufacturer | ROHM Semiconductor | - | - |
Product Category | Discrete Semiconductor Modules | - | - |
RoHS | Y | - | - |
Product | Power Semiconductor Modules | - | - |
Type | SiC Power Module | - | - |
Vf Forward Voltage | 1.6 V at 180 A | - | - |
Vgs Gate Source Voltage | - 6 V, 22 V | - | - |
Mounting Style | Screw Mount | - | - |
Package / Case | Module | - | - |
Minimum Operating Temperature | - 40 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Series | BSMx | - | - |
Packaging | Tray | - | - |
Configuration | Chopper | - | - |
Technology | SiC | - | - |
Brand | ROHM Semiconductor | - | - |
Transistor Polarity | N-Channel | - | - |
Typical Delay Time | 49 ns | - | - |
Fall Time | 32 ns | - | - |
Id Continuous Drain Current | 204 A | - | - |
Pd Power Dissipation | 1360 W | - | - |
Product Type | Discrete Semiconductor Modules | - | - |
Rise Time | 36 ns | - | - |
Factory Pack Quantity | 4 | - | - |
Subcategory | Discrete Semiconductor Modules | - | - |
Typical Turn Off Delay Time | 139 ns | - | - |
Typical Turn On Delay Time | 49 ns | - | - |
Vds Drain Source Breakdown Voltage | 1200 V | - | - |
Vgs th Gate Source Threshold Voltage | 1.6 V | - | - |