BFU550XAR vs BFU550X vs BFU550X,215

 
PartNumberBFU550XARBFU550XBFU550X,215
DescriptionRF Bipolar Transistors NPN wideband silicon RF transistor
ManufacturerNXPNXP Semiconductors-
Product CategoryRF Bipolar TransistorsTransistors - Bipolar (BJT) - RF-
RoHSY--
Transistor TypeBipolar WidebandNPN-
TechnologySiSi-
Transistor PolarityNPNNPN-
DC Collector/Base Gain hfe Min60--
Collector Emitter Voltage VCEO Max16 V--
Emitter Base Voltage VEBO2 V--
Continuous Collector Current15 mA15 mA-
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 150 C+ 150 C-
ConfigurationSingleDual-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT143B-4--
PackagingReelDigi-ReelR Alternate Packaging-
Collector Base Voltage VCBO24 V--
DC Current Gain hFE Max200--
Operating Frequency900 MHz900 MHz-
Operating Temperature Range- 40 C to + 150 C--
TypeWideband RF Transistor--
BrandNXP Semiconductors--
Gain Bandwidth Product fT11 GHz--
Maximum DC Collector Current80 mA80 mA-
Pd Power Dissipation450 mW--
Product TypeRF Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Part # Aliases934067708215--
Unit Weight0.000313 oz--
Series-Automotive, AEC-Q101-
Package Case-TO-253-4, TO-253AA-
Mounting Type-Surface Mount, Gull Wing-
Supplier Device Package-SOT-143B-
Power Max-450mW-
Current Collector Ic Max-50mA-
Voltage Collector Emitter Breakdown Max-12V-
DC Current Gain hFE Min Ic Vce-60 @ 15mA, 8V-
Frequency Transition-11GHz-
Noise Figure dB Typ f-0.75db @ 900MHz-
Gain-21.5dB-
Pd Power Dissipation-450 mW-
Collector Emitter Voltage VCEO Max-16 V-
Emitter Base Voltage VEBO-2 V-
DC Collector Base Gain hfe Min-60-
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