BC 817K-16 E6433 vs BC 817K-16 E6327 vs BC817K-16E6327S

 
PartNumberBC 817K-16 E6433BC 817K-16 E6327BC817K-16E6327S
DescriptionBipolar Transistors - BJT NPN Silicon AF TRANSISTORBipolar Transistors - BJT AF TRANS GP BJT NPN 45V 0.5A
ManufacturerInfineon--
Product CategoryBipolar Transistors - BJT--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-23-3--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max45 V--
Collector Base Voltage VCBO50 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage0.7 V--
Maximum DC Collector Current1000 mA--
Gain Bandwidth Product fT170 MHz--
Maximum Operating Temperature+ 150 C--
SeriesBC 817K--
DC Current Gain hFE Max250--
Height1 mm--
Length2.9 mm--
PackagingReel--
Width1.3 mm--
BrandInfineon Technologies--
Continuous Collector Current500 mA--
DC Collector/Base Gain hfe Min100--
Pd Power Dissipation500 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity10000--
SubcategoryTransistors--
Part # AliasesBC817K16E6433HTMA1 BC817K16E6433XT SP000271829--
Unit Weight0.000282 oz--
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