APTGT300DA120G vs APTGT300DA170D3G vs APTGT300DA120D3G

 
PartNumberAPTGT300DA120GAPTGT300DA170D3GAPTGT300DA120D3G
DescriptionIGBT Modules CC6187IGBT Modules DOR CC7010IGBT Modules Power Module - IGBT
ManufacturerMicrochipMicrochipMicrochip
Product CategoryIGBT ModulesIGBT ModulesIGBT Modules
RoHSYYY
ProductIGBT Silicon ModulesIGBT Silicon ModulesIGBT Silicon Modules
ConfigurationSingleSingleSingle
Collector Emitter Voltage VCEO Max1.2 kV1.7 kV1.2 kV
Collector Emitter Saturation Voltage1.7 V2 V1.7 V
Continuous Collector Current at 25 C420 A400 A440 A
Gate Emitter Leakage Current600 nA400 nA400 nA
Pd Power Dissipation1.38 kW1.47 kW1.45 kW
Package / CaseSP6D3-11D3-11
Minimum Operating Temperature- 40 C- 40 C- 40 C
Maximum Operating Temperature+ 100 C+ 125 C+ 125 C
PackagingTubeBulk-
BrandMicrochip / MicrosemiMicrochip / MicrosemiMicrochip / Microsemi
Mounting StyleChassis MountChassis MountChassis Mount
Maximum Gate Emitter Voltage20 V20 V20 V
Product TypeIGBT ModulesIGBT ModulesIGBT Modules
Factory Pack Quantity111
SubcategoryIGBTsIGBTsIGBTs
Unit Weight3.880136 oz--
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