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| PartNumber | 2N5551TA | 2N5551-T | 2N5551-TAP |
| Description | Bipolar Transistors - BJT NPN Transistor General Purpose | Bipolar Transistors - BJT NPN 0.6A 160V | |
| Manufacturer | ON Semiconductor | Rectron | - |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
| RoHS | Y | Y | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-92-3 Kinked Lead | TO-92-3 | - |
| Transistor Polarity | NPN | NPN | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 160 V | 160 V | - |
| Collector Base Voltage VCBO | 180 V | 180 V | - |
| Emitter Base Voltage VEBO | 6 V | 6 V | - |
| Collector Emitter Saturation Voltage | 0.2 V | 0.2 V | - |
| Maximum DC Collector Current | 0.6 A | - | - |
| Gain Bandwidth Product fT | 300 MHz | 100 MHz | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | 2N5551 | - | - |
| DC Current Gain hFE Max | 250 | 250 | - |
| Height | 4.7 mm | - | - |
| Length | 4.7 mm | - | - |
| Packaging | Ammo Pack | Reel | - |
| Width | 3.93 mm | - | - |
| Brand | ON Semiconductor / Fairchild | Rectron | - |
| Continuous Collector Current | 0.6 A | 0.6 A | - |
| DC Collector/Base Gain hfe Min | 80 | 30 | - |
| Pd Power Dissipation | 625 mW | 625 mW | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 2000 | 2000 | - |
| Subcategory | Transistors | Transistors | - |
| Unit Weight | 0.008466 oz | 0.016000 oz | - |
| Technology | - | Si | - |