 |  | | |
| PartNumber | 2N5430 | 2N5431 | 2N5432 |
| Description | Bipolar Transistors - BJT Power BJT | THROUGH-HOLE UJT | TRANSISTOR, Breakdown Voltage Vbr:-25V, Zero Gate Voltage Drain Current Idss Min:150mA, Zero Gate Voltage Drain Current Idss Max:-, Gate-Source Cutoff Voltage Vgs(off) Max:-10V, Transistor Type:J |
| Manufacturer | Microchip | - | VISHAY |
| Product Category | Bipolar Transistors - BJT | - | JFETs (Junction Field Effect) |
| RoHS | N | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-66-2 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 100 V | - | - |
| Collector Base Voltage VCBO | 100 V | - | - |
| Emitter Base Voltage VEBO | 6 V | - | - |
| Collector Emitter Saturation Voltage | 700 mV | - | - |
| Maximum DC Collector Current | 7 A | - | - |
| Packaging | Tray | - | - |
| Brand | Microchip / Microsemi | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 1 | - | - |
| Subcategory | Transistors | - | - |