A2T23H200W23SR6

A2T23H200W23SR6
Mfr. #:
A2T23H200W23SR6
निर्माता:
NXP Semiconductors
विवरण:
RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2300-2400 MHz, 51 W Avg., 28 V
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
A2T23H200W23SR6 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
A2T23H200W23SR6 थप जानकारी A2T23H200W23SR6 Product Details
उत्पादन विशेषता
विशेषता मान
निर्माता:
NXP
उत्पादन कोटि:
आरएफ MOSFET ट्रान्जिस्टर
RoHS:
Y
ट्रान्जिस्टर ध्रुवता:
डुअल एन-च्यानल
प्रविधि:
सि
आईडी - निरन्तर ड्रेन वर्तमान:
1.8 A
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
- 500 mV, 65 V
पाउनु:
15.5 dB
आउटपुट पावर:
51 W
न्यूनतम परिचालन तापमान:
- 40 C
अधिकतम परिचालन तापमान:
+ 150 C
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
ACP-1230S-4
प्याकेजिङ:
रील
सञ्चालन आवृत्ति:
2300 MHz to 2400 MHz
प्रकार:
आरएफ पावर MOSFET
ब्रान्ड:
NXP अर्धचालक
च्यानलहरूको संख्या:
2 Channel
उत्पादन प्रकार:
आरएफ MOSFET ट्रान्जिस्टर
कारखाना प्याक मात्रा:
150
उपश्रेणी:
MOSFETs
Vgs - गेट-स्रोत भोल्टेज:
- 6 V, 10 V
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
2.1 V
भाग # उपनाम:
935347117128
एकाइ वजन:
0 oz
Tags
A2T23H, A2T23, A2T2, A2T
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Airfast RF Power LDMOS Transistor 2300MHz to 2400MHz 51W 28V 4-Pin ACP-1230S 250Units T/R
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IC DGT POT 10KOHM 1024TAP 16TQFN
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Trans RF FET N-CH 65V 6-Pin T/R
***i-Key
AIRFAST RF POWER LDMOS TRANSISTO
भाग # Mfg। विवरण स्टक मूल्य
A2T23H200W23SR6
DISTI # V36:1790_18659181
NXP SemiconductorsRF POWER TRANSISTOR0
  • 150000:$51.4100
  • 75000:$51.4200
  • 15000:$53.1900
  • 1500:$57.3500
  • 150:$58.1200
A2T23H200W23SR6
DISTI # A2T23H200W23SR6-ND
NXP SemiconductorsAIRFAST RF POWER LDMOS TRANSISTO
RoHS: Compliant
Min Qty: 150
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 150:$58.1154
A2T23H200W23SR6
DISTI # A2T23H200W23SR6
Avnet, Inc.Airfast RF Power LDMOS Transistor 2300MHz to 2400MHz 51W 28V 4-Pin ACP-1230S 250Units T/R (Alt: A2T23H200W23SR6)
RoHS: Compliant
Min Qty: 150
Container: Tape and Reel
Europe - 0
  • 1500:€50.4900
  • 900:€54.0900
  • 600:€58.1900
  • 300:€60.5900
  • 150:€63.0900
A2T23H200W23SR6
DISTI # A2T23H200W23SR6
Avnet, Inc.Airfast RF Power LDMOS Transistor 2300MHz to 2400MHz 51W 28V 4-Pin ACP-1230S 250Units T/R - Tape and Reel (Alt: A2T23H200W23SR6)
RoHS: Compliant
Min Qty: 150
Container: Reel
Americas - 0
  • 1500:$53.8900
  • 900:$54.9900
  • 600:$56.9900
  • 300:$59.3900
  • 150:$61.7900
A2T23H200W23SR6
DISTI # A2T23H200W23SR6
Avnet, Inc.Airfast RF Power LDMOS Transistor 2300MHz to 2400MHz 51W 28V 4-Pin ACP-1230S 250Units T/R (Alt: A2T23H200W23SR6)
RoHS: Compliant
Min Qty: 150
Container: Tape and Reel
Asia - 0
  • 7500:$53.0250
  • 3750:$54.3846
  • 1500:$55.0909
  • 750:$55.8158
  • 450:$57.3243
  • 300:$58.9167
  • 150:$60.6000
A2T23H200W23SR6
DISTI # 771-A2T23H200W23SR6
NXP SemiconductorsRF MOSFET Transistors A2T23H200W23S/CFM6F///REEL 13 Q2 NDP
RoHS: Compliant
0
  • 1:$67.8800
  • 5:$66.6300
  • 10:$64.9100
  • 25:$63.6300
  • 100:$58.9700
  • 150:$56.4200
A2T23H200W23SR6
DISTI # A2T23H200W23SR6
NXP SemiconductorsRF POWER TRANSISTOR
RoHS: Compliant
0
  • 150:$63.6300
छवि भाग # विवरण
A2T23H200W23SR6

Mfr.#: A2T23H200W23SR6

OMO.#: OMO-A2T23H200W23SR6

RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2300-2400 MHz, 51 W Avg., 28 V
A2T23H200W23SR6

Mfr.#: A2T23H200W23SR6

OMO.#: OMO-A2T23H200W23SR6-NXP-SEMICONDUCTORS

RF POWER TRANSISTOR
उपलब्धता
स्टक:
Available
अर्डर मा:
4000
मात्रा प्रविष्ट गर्नुहोस्:
A2T23H200W23SR6 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ६७.८८
US$ ६७.८८
5
US$ ६६.६३
US$ ३३३.१५
10
US$ ६४.९१
US$ ६४९.१०
25
US$ ६३.६३
US$ १ ५९०.७५
100
US$ ५८.९७
US$ ५ ८९७.००
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