IRFH5207TRPBF

Mfr. #:: IRFH5207TRPBF
निर्माता:: Infineon Technologies
विवरण:: MOSFET N-CH 75V 13A 8-PQFN
जीवन चक्र:: यस निर्माताबाट नयाँ।
डाटा पाना:: IRFH5207TRPBF डाटा पाना
डेलिभरी:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: IRFH5207TRPBF Datasheet IRFH5207TRPBF Datasheet (P4-P6)IRFH5207TRPBF Datasheet (P7-P9)
ECAD Model:

उत्पादन विशेषता
विशेषता मान

निर्माता: IR

उत्पादन कोटि: FETs - एकल

प्याकेजिङ: रील

माउन्टिङ-शैली: SMD/SMT

प्याकेज-केस: PQFN-8

प्रविधि: सि

च्यानलहरूको संख्या: 1 Channel

कन्फिगरेसन: एकल क्वाड ड्रेन ट्रिपल स्रोत

ट्रान्जिस्टर-प्रकार: 1 N-Channel

Pd-शक्ति-डिसिपेशन: 3.6 W

अधिकतम-सञ्चालन-तापमान: + 150 C

न्यूनतम-सञ्चालन-तापमान: - 55 C

पतन-समय: 7.1 ns

उदय-समय: 12 ns

Vgs-गेट-स्रोत-भोल्टेज: 20 V

आईडी-निरन्तर-नाली-वर्तमान: 71 A

Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज: 75 V

Vgs-th-गेट-स्रोत-थ्रेसहोल्ड-भोल्टेज: 4 V

Rds-अन-ड्रेन-स्रोत-प्रतिरोध: 9.6 mOhms

ट्रान्जिस्टर-ध्रुवता: N- च्यानल

सामान्य-टर्न-अफ-ढिलाइ-समय: 20 ns

सामान्य-टर्न-अन-डिले-समय: 7.2 ns

Qg-गेट-चार्ज: 40 nC

फर्वार्ड-ट्रान्सकन्डक्टन्स-न्यूनतम: 51 S

च्यानल-मोड: वृद्धि

Tags: IRFH5207, IRFH520, IRFH52, IRFH5, IRFH, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRFH5207TRPBF विवरण

***ineon SCT: 75V Single N-Channel HEXFET Power MOSFET in a PQFN package, PG-TDSON-8, RoHS

***ineon: Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs

***ark: MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:71A; Drain Source Voltage Vds:75V; On Resistance Rds(on):8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:3.6W ;RoHS Compliant: Yes

***ineon SCT: 60V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS

***trelec: MOSFET Operating temperature: -55...+150 °C Housing type: PQFN-8 (3x3) Polarity: N Variants: Enhancement mode Power dissipation: 100 W

***ineon: Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs

***ark: MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:89A; Drain Source Voltage Vds:60V; On Resistance Rds(on):5.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:3.6W ;RoHS Compliant: Yes

***ure Electronics: Single N-Channel 40 V 3.3 mOhm 65 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm

***ark: T&R / MOSFET, 40V, 85A, 3.3 mOhm, 65 nC Qg, PQFN56

***ineon SCT: 40V Single N-Channel HEXFET Power MOSFET in a Lead Free PQFN 5mm x 6mm package, PG-TDSON-8, RoHS

***Yang: Trans MOSFET N-CH 40V 117A 8-Pin PQFN T/R - Tape and Reel

***ineon: Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: Battery Operated Drive; Consumer Full-Bridge; Full-Bridge; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Push-Pull

***nell: MOSFET, N-CH, 40V, 85A, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:85A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0025ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:78W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PQFN; No. of Pins:5; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 117 / Drain-Source Voltage (Vds) V = 40 / ON Resistance (Rds(on)) mOhm = 3.3 / Gate-Source Voltage V = 20 / Fall Time ns = 26 / Rise Time ns = 37 / Turn-OFF Delay Time ns = 33 / Turn-ON Delay Time ns = 11 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = PQFN / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 78

***ure Electronics: Single N-Channel 100 V 12.4 mOhm 48 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a PQFN package, PG-TDSON-8, RoHS

***Yang: Trans MOSFET N-CH 10V 11A 8-Pin QFN T/R - Tape and Reel

***ineon: Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs

***ark: MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:63A; Drain Source Voltage Vds:100V; On Resistance Rds(on):10.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:3.6W ;RoHS Compliant: Yes

***nell: MOSFET, N-CH, 100V, 63A, PQFN-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 63A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0103ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 114W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 11 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 12.4 / Gate-Source Voltage V = 20 / Fall Time ns = 6.4 / Rise Time ns = 9.6 / Turn-OFF Delay Time ns = 22 / Turn-ON Delay Time ns = 7.8 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = PQFN / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 114

***ernational Rectifier: -30V Single P-Channel HEXFET Power MOSFET in a PQFN 3mm x 3mm package

***(Formerly Allied Electronics): MOSFET, P-CHANNEL, -30V, -11A, 14.6 MOHM, 25VGS, PQFN3X3

***ment14 APAC: MOSFET,P CH,DIODE,30V,11A,PQFN33; Transistor Polarity:P Channel; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.01ohm; Rds(on) Test Voltage Vgs:-20V; Power Dissipation Pd:2.8W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Current Id Max:-11A; Power Dissipation Pd:2.8W; Voltage Vgs Max:-25V

Market price

भाग #	Mfg।	विवरण	स्टक	मूल्य
IRFH5207TRPBF DISTI # IRFH5207TRPBF-ND	Infineon Technologies AG	MOSFET N-CH 75V 13A 8-PQFN RoHS: Compliant Min Qty: 4000 Container: Tape & Reel (TR)	Limited Supply - Call
IRFH5207TRPBF DISTI # 70019276	Infineon Technologies AG	MOSFET 75V,Gen 10.7,10.11 mOhm max,43.5 nC Qg RoHS: Compliant	0	4000:$0.7220 8000:$0.7080 20000:$0.6860
IRFH5207TRPBF DISTI # 942-IRFH5207TRPBF	Infineon Technologies AG	MOSFET 75V 1 N-CH HEXFET 9.6mOhms 39nC RoHS: Compliant	0

सम्बन्धित उत्पादनहरु

छवि	भाग #	विवरण
	Mfr.#: IRFH5250TRPBF OMO.#: OMO-IRFH5250TRPBF	MOSFET 25V 1 N-CH HEXFET 1.15mOhms 52nC
	Mfr.#: IRFH5250DTR2PBF OMO.#: OMO-IRFH5250DTR2PBF	MOSFET MOSFT 25V FETky 100A 1.4mOhm 39nC Qg
	Mfr.#: IRFH5220TR2PBF OMO.#: OMO-IRFH5220TR2PBF	MOSFET MOSFT 200V 20A 100mOhm 20nC Qg
	Mfr.#: IRFH5250DTRPBF. OMO.#: OMO-IRFH5250DTRPBF--1190	TRENCH_MOSFETS , ROHS COMPLIANT: YES
	Mfr.#: IRFH5207TRPBF OMO.#: OMO-IRFH5207TRPBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 75V 13A 8-PQFN
	Mfr.#: IRFH5210PBF OMO.#: OMO-IRFH5210PBF-1190	नयाँ र मौलिक
	Mfr.#: IRFH5210TRPBF OMO.#: OMO-IRFH5210TRPBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 100V 10A 8-PQFN
	Mfr.#: IRFH5215TR2PBF OMO.#: OMO-IRFH5215TR2PBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 150V 5.0A PQFN
	Mfr.#: IRFH5250TRPBF OMO.#: OMO-IRFH5250TRPBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 25V 45A PQFN
	Mfr.#: IRFH5215TRPBF OMO.#: OMO-IRFH5215TRPBF-INFINEON-TECHNOLOGIES	IGBT Transistors MOSFET 150V 1 N-CH HEXFET 58mOhms 20nC

उपलब्धता

स्टक:: Available
अर्डर मा:: 1500
मात्रा प्रविष्ट गर्नुहोस्:

IRFH5207TRPBF को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।

सन्दर्भ मूल्य (USD)

मात्रा
एकाइ मूल्य
विस्तार मूल्य

1: ~~US$ १.०३~~; ~~US$ १.०३~~

10: ~~US$ ०.९८~~; ~~US$ ९.७८~~

100: ~~US$ ०.९३~~; ~~US$ ९२.६१~~

500: ~~US$ ०.८७~~; ~~US$ ४३७.३५~~

1000: ~~US$ ०.८२~~; ~~US$ ८२३.२०~~

2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।

बाट सुरु गर्नुहोस्

IRFH5207 3
IRFH520 9
IRFH52 24
IRFH5 94
IRFH 278
IRF 8615

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IRFH5207TRPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes