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SI2333CDS-T1-GE3

SI2333CDS-T1-GE3
Mfr. #:
SI2333CDS-T1-GE3
निर्माता:
Vishay
विवरण:
MOSFET P-CH 12V 7.1A SOT-23
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SI2333CDS-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
SI2333CDS-T1-GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता
VISHAY
उत्पादन कोटि
FETs - एकल
शृङ्खला
TrenchFETR
प्याकेजिङ
Digi-ReelR वैकल्पिक प्याकेजिङ
अंश-उपनामहरू
SI2333CDS-GE3
एकाइ - वजन
0.050717 oz
माउन्टिङ-शैली
SMD/SMT
प्याकेज-केस
TO-236-3, SC-59, SOT-23-3
प्रविधि
सि
सञ्चालन - तापक्रम
-55°C ~ 150°C (TJ)
माउन्टिङ-प्रकार
सतह माउन्ट
च्यानलहरूको संख्या
1 Channel
आपूर्तिकर्ता-उपकरण-प्याकेज
SOT-23-3 (TO-236)
कन्फिगरेसन
एकल
FET-प्रकार
MOSFET P- च्यानल, धातु अक्साइड
पावर-अधिकतम
2.5W
ट्रान्जिस्टर-प्रकार
1 P-Channel
ड्रेन-टू-स्रोत-भोल्टेज-Vdss
12V
इनपुट-Capacitance-Ciss-Vds
1225pF @ 6V
FET - सुविधा
मानक
वर्तमान-निरन्तर-नाली-Id-25°C
7.1A (Tc)
Rds-on-max-Id-Vgs
35 mOhm @ 5.1A, 4.5V
Vgs-th-max-Id
1V @ 250μA
गेट-चार्ज-Qg-Vgs
25nC @ 4.5V
Pd-शक्ति-डिसिपेशन
1.25 W
अधिकतम-सञ्चालन-तापमान
+ 150 C
न्यूनतम-सञ्चालन-तापमान
- 55 C
पतन-समय
35 ns
उदय-समय
35 ns
Vgs-गेट-स्रोत-भोल्टेज
8 V
आईडी-निरन्तर-नाली-वर्तमान
5.1 A
Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज
- 12 V
Rds-अन-ड्रेन-स्रोत-प्रतिरोध
35 mOhms
ट्रान्जिस्टर-ध्रुवता
P- च्यानल
सामान्य-टर्न-अफ-ढिलाइ-समय
45 ns
सामान्य-टर्न-अन-डिले-समय
13 ns
च्यानल-मोड
वृद्धि
Tags
SI2333CDS-T1-G, SI2333CDS-T1, SI2333CDS-T, SI2333C, SI2333, SI233, SI23, SI2
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
P-Channel 12 V 0.039 Ohm 2.5 W Surface Mount Power Mosfet - SOT-23-3
***ark
Transistor Polarity:p Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:7.1A; On Resistance Rds(On):0.0285Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; Msl:- Rohs Compliant: No
***ment14 APAC
MOSFET, P-CH, 12V, 7.1A, SOT23; Transistor Polarity:P Channel; Continuous Drain Current Id:-7.1A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):28.5mohm; Rds(on) Test Voltage Vgs:-4.5V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:-7.1A; Power Dissipation Pd:2.5W; Voltage Vgs Max:8V
SI2 Series TrenchFET® Power MOSFETs
Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.
भाग # Mfg। विवरण स्टक मूल्य
SI2333CDS-T1-GE3
DISTI # 30603083		Vishay IntertechnologiesTrans MOSFET P-CH 12V 5.1A 3-Pin SOT-23 T/R
RoHS: Compliant		822
  • 250:$0.3570
  • 100:$0.4029
  • 50:$0.4628
  • 10:$0.5954
  • 9:$3.1237
SI2333CDS-T1-GE3
DISTI # SI2333CDS-T1-GE3TR-ND		Vishay SiliconixMOSFET P-CH 12V 7.1A SOT-23
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$0.1819
SI2333CDS-T1-GE3
DISTI # SI2333CDS-T1-GE3CT-ND		Vishay SiliconixMOSFET P-CH 12V 7.1A SOT-23
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.2055
  • 500:$0.2660
  • 100:$0.3627
  • 10:$0.4840
  • 1:$0.5700
SI2333CDS-T1-GE3
DISTI # SI2333CDS-T1-GE3DKR-ND		Vishay SiliconixMOSFET P-CH 12V 7.1A SOT-23
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.2055
  • 500:$0.2660
  • 100:$0.3627
  • 10:$0.4840
  • 1:$0.5700
SI2333CDS-T1-GE3
DISTI # C1S803600844292		Vishay IntertechnologiesMOSFETs
RoHS: Compliant		822
  • 500:$0.2610
  • 250:$0.2800
  • 100:$0.3160
  • 50:$0.3630
  • 10:$0.4670
  • 1:$2.4500
SI2333CDS-T1-GE3
DISTI # SI2333CDS-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 12V 5.1A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2333CDS-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.1349
  • 6000:$0.1309
  • 12000:$0.1259
  • 18000:$0.1219
  • 30000:$0.1189
SI2333CDS-T1-GE3
DISTI # SI2333CDS-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 12V 5.1A 3-Pin SOT-23 T/R (Alt: SI2333CDS-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 3000:€0.3779
  • 6000:€0.2579
  • 12000:€0.2219
  • 18000:€0.2049
  • 30000:€0.1899
SI2333CDS-T1-GE3
DISTI # SI2333CDS-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 12V 5.1A 3-Pin SOT-23 T/R (Alt: SI2333CDS-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
    SI2333CDS-T1-GE3
    DISTI # 29X0526    		Vishay IntertechnologiesMOSFET, P CHANNEL, -12V, -7.1A, SOT-23-3, FULL REEL,Transistor Polarity:P Channel,Continuous Drain Current Id:-7.1A,Drain Source Voltage Vds:-12V,On Resistance Rds(on):0.0285ohm,Rds(on) Test Voltage Vgs:-4.5V,No. of Pins:3Pins , RoHS Compliant: Yes0
    • 1:$0.2760
    • 3000:$0.2670
    • 6000:$0.2570
    SI2333CDS-T1-GE3
    DISTI # 16P3712    		Vishay IntertechnologiesP CHANNEL MOSFET, -12V, 5.1A,Transistor Polarity:P Channel,Continuous Drain Current Id:-5.1A,Drain Source Voltage Vds:-12V,On Resistance Rds(on):59mohm,Rds(on) Test Voltage Vgs:8V,Threshold Voltage Vgs:-1V,No. of Pins:3,MSL:-, RoHS Compliant: Yes0
    • 1:$0.7600
    • 10:$0.6070
    • 25:$0.5580
    • 50:$0.5090
    • 100:$0.4600
    • 500:$0.3800
    • 1000:$0.3040
    SI2333CDS-T1-GE3.
    DISTI # 16AC0253    		Vishay IntertechnologiesTransistor Polarity:P Channel,Continuous Drain Current Id:-7.1A,Drain Source Voltage Vds:-12V,On Resistance Rds(on):0.0285ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-1V,Power Dissipation Pd:2.5W,No. of Pins:3Pins, RoHS Compliant: No0
    • 1:$0.2760
    • 3000:$0.2670
    • 6000:$0.2570
    SI2333CDS-T1-GE3
    DISTI # R1082509    		Vishay DaleTRANSITOR,SI2315BDS
    RoHS: Compliant    		0
    • 10:$0.5700
    • 50:$0.4700
    • 100:$0.4300
    • 250:$0.3900
    • 500:$0.3700
    SI2333CDS-T1-GE3
    DISTI # 781-SI2333CDS-T1-GE3    		Vishay IntertechnologiesMOSFET 12V 5.1A 2.5W 35 mohms @ 4.5V
    RoHS: Compliant    		0
    • 1:$0.7600
    • 10:$0.6070
    • 100:$0.4600
    • 500:$0.3800
    • 1000:$0.3040
    • 3000:$0.2760
    • 6000:$0.2570
    SI2333CDS-T1-GE3Vishay Intertechnologies 12
    • 7:$0.7168
    • 1:$0.8960
    SI2333CDST1GE3Vishay Intertechnologies 
    RoHS: Compliant    		Europe - 3000
      SI2315BDS-T1-E3Vishay IntertechnologiesMOSFET 1.8V 3.2A 1.25W
      RoHS: Compliant      		Americas -
        SI2333CDS-T1-GE3Vishay IntertechnologiesMOSFET 12V 5.1A 2.5W 35 mohms @ 4.5V
        RoHS: Compliant        		Americas -
          SI2333CDS-T1-GE3
          DISTI # 1779259          		Vishay IntertechnologiesMOSFET, P-CH, 12V, 7.1A, SOT23
          RoHS: Compliant          		0
          • 5:£0.3000
          • 25:£0.2950
          • 100:£0.2650
          • 250:£0.2630
          • 500:£0.2410
          SI2333CDS-T1-GE3
          DISTI # 1779259          		Vishay IntertechnologiesMOSFET, P-CH, 12V, 7.1A, SOT23
          RoHS: Compliant          		40
          • 1:$0.9030
          • 10:$0.7660
          • 100:$0.5740
          • 500:$0.4210
          • 1000:$0.3470
          SI2333CDS-T1-GE3
          DISTI # 1779259RL          		Vishay IntertechnologiesMOSFET, P-CH, 12V, 7.1A, SOT23
          RoHS: Compliant          		0
          • 1:$0.9030
          • 10:$0.7660
          • 100:$0.5740
          • 500:$0.4210
          • 1000:$0.3470
          छवि भाग # विवरण
          SI2333CDS-T1-E3

          Mfr.#: SI2333CDS-T1-E3

          OMO.#: OMO-SI2333CDS-T1-E3

          		 MOSFET 12V 5.1A 2.5W 35mohm @ 4.5V
          SI2333CDS-T1-GE3

          Mfr.#: SI2333CDS-T1-GE3

          OMO.#: OMO-SI2333CDS-T1-GE3

          		 MOSFET 12V 5.1A 2.5W 35 mohms @ 4.5V
          SI2333CDS

          Mfr.#: SI2333CDS

          OMO.#: OMO-SI2333CDS-1190

          		 नयाँ र मौलिक
          SI2333CDS-T1-E3

          Mfr.#: SI2333CDS-T1-E3

          OMO.#: OMO-SI2333CDS-T1-E3-VISHAY

          		 MOSFET P-CH 12V 7.1A SOT23-3
          SI2333CDS-T1-GE3

          Mfr.#: SI2333CDS-T1-GE3

          OMO.#: OMO-SI2333CDS-T1-GE3-VISHAY

          		 MOSFET P-CH 12V 7.1A SOT-23
          SI2333CDS-T1-GE3/O3XXX

          Mfr.#: SI2333CDS-T1-GE3/O3XXX

          OMO.#: OMO-SI2333CDS-T1-GE3-O3XXX-1190

          		 नयाँ र मौलिक
          SI2333CDS-TI-E3

          Mfr.#: SI2333CDS-TI-E3

          OMO.#: OMO-SI2333CDS-TI-E3-1190

          		 नयाँ र मौलिक
          SI2333CDS-TI-GE3

          Mfr.#: SI2333CDS-TI-GE3

          OMO.#: OMO-SI2333CDS-TI-GE3-1190

          		 नयाँ र मौलिक
          SI2333CDS-T1-E3-CUT TAPE

          Mfr.#: SI2333CDS-T1-E3-CUT TAPE

          OMO.#: OMO-SI2333CDS-T1-E3-CUT-TAPE-1190

          		 नयाँ र मौलिक
          SI2333CDS-T1-GE3-CUT TAPE

          Mfr.#: SI2333CDS-T1-GE3-CUT TAPE

          OMO.#: OMO-SI2333CDS-T1-GE3-CUT-TAPE-1190

          		 नयाँ र मौलिक
          उपलब्धता
          स्टक:
          Available
          अर्डर मा:
          3000
          मात्रा प्रविष्ट गर्नुहोस्:
          SI2333CDS-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
          सन्दर्भ मूल्य (USD)
          मात्रा
          एकाइ मूल्य
          विस्तार मूल्य
          1
          US$ ०.१७
          US$ ०.१७
          10
          US$ ०.१६
          US$ १.६२
          100
          US$ ०.१५
          US$ १५.३९
          500
          US$ ०.१५
          US$ ७२.६५
          1000
          US$ ०.१४
          US$ १३६.८०
          बाट सुरु गर्नुहोस्
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