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FDB5680

FDB5680
Mfr. #:
FDB5680
निर्माता:
Rochester Electronics, LLC
विवरण:
Power Field-Effect Transistor, 40A I(D), 60V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
FDB5680 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता
फेयरचाइल्ड
उत्पादन कोटि
आईसी चिप्स
Tags
FDB568, FDB56, FDB5, FDB
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ser
Not available to order USE 512-FDB20AN06A0
***i-Key
N-CHANNEL POWER MOSFET
***el Nordic
Contact for details
***emi
N-Channel PowerTrench® SyncFET™ 30V, 42A, 3mΩ
***r Electronics
Power Field-Effect Transistor, 113A I(D), 30V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***nell
MOSFET, N CH, 30V, 42A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0024ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.6V; Power Dissipation Pd:65W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***rchild Semiconductor
The FDMS7670AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
***ure Electronics
Single N-Channel 60 V 15.8 mOhm 22 nC HEXFET® Power Mosfet - TO-252AA
***(Formerly Allied Electronics)
MOSFET, Power,N-Ch,VDSS 60V,RDS(ON) 12.6 Milliohms,ID 43A,D-Pak,PD 71W,VGS+/-20V
***ineon
Benefits: RoHS Compliant | Target Applications: AC-DC; Battery Operated Drive
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:43A; On Resistance Rds(On):0.0126Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V Rohs Compliant: Yes
***roFlash
Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 11.1 Milliohms;ID 51A;TO-220AB;PD 80W;-55deg
***ure Electronics
Single N-Channel 55 V 13.9 mOhm 29 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***p One Stop
Trans MOSFET N-CH Si 55V 51A 3-Pin(3+Tab) TO-220AB Tube
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 80 W
***ment14 APAC
MOSFET, N, 55V, 51A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:51A; Drain Source Voltage Vds:55V; On Resistance Rds(on):13.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:80W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:51A; Junction to Case Thermal Resistance A:1.87°C/W; On State resistance @ Vgs = 10V:13.9ohm; Package / Case:TO-220AB; Power Dissipation Pd:80W; Power Dissipation Pd:80W; Pulse Current Idm:200A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***ure Electronics
Single N-Channel 60 V 15.8 mOhm 22 nC HEXFET® Power Mosfet - TO-220-3
***klin Elektronik
INFINEON THT MOSFET NFET 60V 43A 15,8mΩ 175°C TO-220 IRFB3806PBF
*** Source Electronics
Trans MOSFET N-CH 60V 43A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 60V 43A TO-220AB
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***(Formerly Allied Electronics)
MOSFET, 60V, 43A, 16.2 MOHM, 22 NC QG, TO-220AB
***ineon
Benefits: RoHS Compliant | Target Applications: AC-DC; Battery Operated Drive
***ment14 APAC
MOSFET, N, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:43A; Drain Source Voltage Vds:60V; On Resistance Rds(on):12.6mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:71W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:43A; Package / Case:TO-220AB; Power Dissipation Pd:71W; Pulse Current Idm:170A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***emi
Single N-Channel Logic Level Power MOSFET 60V, 46A, 16mΩ
***(Formerly Allied Electronics)
NTD5865NLT4G N-channel MOSFET Transistor; 40 A; 60 V; 3-Pin DPAK
***ure Electronics
N-Channel 60 V 16 mOhm 52 W Surface Mount Power MosFet - TO-252-3
***nell
MOSFET, N-CH, 60V, 46A, 71W, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 46A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.016oh; Available until stocks are exhausted Alternative available
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 46 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 19 / Gate-Source Voltage V = 20 / Fall Time ns = 4.4 / Rise Time ns = 12.4 / Turn-OFF Delay Time ns = 26 / Turn-ON Delay Time ns = 8.4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 71
***emi
N-Channel PowerTrench® MOSFET, 40V, 50A, 8.5mΩ
***ure Electronics
N-Channel 40 V 50 A 8.5 mOhm Surface Mount PowerTrench® Mosfet -TO-263AB
*** Stop Electro
Power Field-Effect Transistor, 15A I(D), 40V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***el Electronic
Chip Resistor - Surface Mount 910Ohm 0402 (1005 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 910 OHM 1% 1/10W 0402
***ment14 APAC
MOSFET, N, SMD, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:40V; On Resistance Rds(on):8.5mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:60W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D2-PAK; No. of Pins:2; SVHC:No SVHC (20-Jun-2011); Current Id Max:50A; Package / Case:D2-PAK; Power Dissipation Pd:60W; Power Dissipation Pd:60W; Pulse Current Idm:100A; Termination Type:SMD; Voltage Vds Typ:40V; Voltage Vgs Max:1.9V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V
***rchild Semiconductor
This N–Channel MOSFET has been produced using Fairchild Semiconductor's proprietary PowerTrench® technology to deliver low rDS(on) and optimized BVDSS capability to offer superior performance benefit in the application.
भाग # Mfg। विवरण स्टक मूल्य
FDB5680
DISTI # 512-FDB5680		ON SemiconductorMOSFET
RoHS: Not compliant		0
    FDB5680Fairchild Semiconductor CorporationPower Field-Effect Transistor, 40A I(D), 60V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RoHS: Compliant    		8000
    • 1000:$1.5800
    • 500:$1.6600
    • 100:$1.7300
    • 25:$1.8100
    • 1:$1.9400
    FDB5680Fairchild Semiconductor Corporation40 A, 60 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB609
    • 287:$0.6250
    • 51:$0.7000
    • 1:$2.0000
    छवि भाग # विवरण
    FDB8870

    Mfr.#: FDB8870

    OMO.#: OMO-FDB8870

    		 MOSFET 30V N-Channel PowerTrench
    FDB045AN08AO

    Mfr.#: FDB045AN08AO

    OMO.#: OMO-FDB045AN08AO-1190

    		 नयाँ र मौलिक
    FDB088N08

    Mfr.#: FDB088N08

    OMO.#: OMO-FDB088N08-ON-SEMICONDUCTOR

    		 MOSFET N-CH 75V 75A D2PAK
    FDB2570FSC

    Mfr.#: FDB2570FSC

    OMO.#: OMO-FDB2570FSC-1190

    		 नयाँ र मौलिक
    FDB3672

    Mfr.#: FDB3672

    OMO.#: OMO-FDB3672-ON-SEMICONDUCTOR

    		 MOSFET N-CH 100V 44A D2PAK
    FDB7042

    Mfr.#: FDB7042

    OMO.#: OMO-FDB7042-1190

    		 नयाँ र मौलिक
    FDB9P25

    Mfr.#: FDB9P25

    OMO.#: OMO-FDB9P25-1190

    		 नयाँ र मौलिक
    FDB28N30TM-CUT TAPE

    Mfr.#: FDB28N30TM-CUT TAPE

    OMO.#: OMO-FDB28N30TM-CUT-TAPE-1190

    		 नयाँ र मौलिक
    FDB86360-F085

    Mfr.#: FDB86360-F085

    OMO.#: OMO-FDB86360-F085-ON-SEMICONDUCTOR

    		 MOSFET N-CH 80V 110A TO263
    FDBA 56-16-26 PN-K 059

    Mfr.#: FDBA 56-16-26 PN-K 059

    OMO.#: OMO-FDBA-56-16-26-PN-K-059-1190

    		 FDBA 56-16-26 PN-K 059
    उपलब्धता
    स्टक:
    Available
    अर्डर मा:
    5000
    मात्रा प्रविष्ट गर्नुहोस्:
    FDB5680 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1
    US$ ०.९४
    US$ ०.९४
    10
    US$ ०.८९
    US$ ८.९१
    100
    US$ ०.८४
    US$ ८४.३८
    500
    US$ ०.८०
    US$ ३९८.४५
    1000
    US$ ०.७५
    US$ ७५०.००
    2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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