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A2V09H525-04NR6

A2V09H525-04NR6
Mfr. #:
A2V09H525-04NR6
निर्माता:
NXP / Freescale
विवरण:
RF MOSFET Transistors Airfast RF LDMOS Wideband Integrated power amplifier, 575-960 MHz, 525 W, 48 V
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
A2V09H525-04NR6 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
NXP
उत्पादन कोटि:
आरएफ MOSFET ट्रान्जिस्टर
RoHS:
Y
ट्रान्जिस्टर ध्रुवता:
डुअल एन-च्यानल
प्रविधि:
सि
आईडी - निरन्तर ड्रेन वर्तमान:
2.8 A
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
- 500 mV, 105 V
पाउनु:
18.9 dB
आउटपुट पावर:
120 W
न्यूनतम परिचालन तापमान:
- 40 C
अधिकतम परिचालन तापमान:
+ 150 C
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
OM-1230-4
प्याकेजिङ:
रील
सञ्चालन आवृत्ति:
720 MHz to 960 MHz
प्रकार:
आरएफ पावर MOSFET
ब्रान्ड:
NXP / Freescale
च्यानलहरूको संख्या:
2 Channel
नमी संवेदनशील:
हो
उत्पादन प्रकार:
आरएफ MOSFET ट्रान्जिस्टर
कारखाना प्याक मात्रा:
150
उपश्रेणी:
MOSFETs
Vgs - गेट-स्रोत भोल्टेज:
- 6 V, 10 V
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
1.3 V
भाग # उपनाम:
935330045528
एकाइ वजन:
0.187784 oz
Tags
A2V09, A2V0, A2V
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Semiconductors SCT
Airfast RF LDMOS Wideband Integrated power amplifier, 575-960 MHz, 525 W, 48 V, FM4F, RoHS
***escale Semiconductor
Airfast RF Power LDMOS Transistor, 720-960 MHz, 120 W Avg., 48 V
***i-Key
AIRFAST RF LDMOS WIDEBAND INTEGR
भाग # Mfg। विवरण स्टक मूल्य
A2V09H525-04NR6
DISTI # A2V09H525-04NR6-ND		NXP SemiconductorsAIRFAST RF LDMOS WIDEBAND INTEGR
RoHS: Compliant
Min Qty: 150
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 150:$136.6405
A2V09H525-04NR6
DISTI # A2V09H525-04NR6		Avnet, Inc.Airfast RF LDMOS Wideband Integrated power amplifier, 575-960 MHz, 525 W, 48 V - Tape and Reel (Alt: A2V09H525-04NR6)
RoHS: Compliant
Min Qty: 150
Container: Reel		Americas - 0
  • 1500:$130.6900
  • 900:$133.1900
  • 600:$138.1900
  • 300:$143.7900
  • 150:$149.6900
A2V09H525-04NR6
DISTI # 841-A2V09H525-04NR6		NXP SemiconductorsRF MOSFET Transistors A2V09H525-04N/FM4F///REEL 13 Q2 DP
RoHS: Compliant		0
  • 150:$133.5700
A2V09H525-04NR6
DISTI # A2V09H525-04NR6		NXP SemiconductorsRF POWER TRANSISTOR
RoHS: Compliant		317
  • 1:$141.6100
  • 10:$137.8800
  • 25:$136.0900
छवि भाग # विवरण
A2V09H525-04NR6

Mfr.#: A2V09H525-04NR6

OMO.#: OMO-A2V09H525-04NR6

 RF MOSFET Transistors Airfast RF LDMOS Wideband Integrated power amplifier, 575-960 MHz, 525 W, 48 V
A2V09H525-04N

Mfr.#: A2V09H525-04N

OMO.#: OMO-A2V09H525-04N-1190

 नयाँ र मौलिक
A2V09H525-04NR6

Mfr.#: A2V09H525-04NR6

OMO.#: OMO-A2V09H525-04NR6-NXP-SEMICONDUCTORS

 AIRFAST RF LDMOS WIDEBAND INTEGR
उपलब्धता
स्टक:
Available
अर्डर मा:
5500
मात्रा प्रविष्ट गर्नुहोस्:
A2V09H525-04NR6 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
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