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SI7178DP-T1-GE3

SI7178DP-T1-GE3
Mfr. #:
SI7178DP-T1-GE3
निर्माता:
Vishay
विवरण:
Trans MOSFET N-CH 100V 14.9A 8-Pin PowerPAK SO T/R
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SI7178DP-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता
Vishay Siliconix
उत्पादन कोटि
FETs - एकल
शृङ्खला
TrenchFETR
प्याकेजिङ
Digi-ReelR वैकल्पिक प्याकेजिङ
अंश-उपनामहरू
SI7178DP-GE3
एकाइ - वजन
0.017870 oz
माउन्टिङ-शैली
SMD/SMT
प्याकेज-केस
PowerPAKR SO-8
प्रविधि
सि
सञ्चालन - तापक्रम
-55°C ~ 150°C (TJ)
माउन्टिङ-प्रकार
सतह माउन्ट
च्यानलहरूको संख्या
1 Channel
आपूर्तिकर्ता-उपकरण-प्याकेज
PowerPAKR SO-8
कन्फिगरेसन
एकल
FET-प्रकार
MOSFET एन-च्यानल, धातु अक्साइड
पावर-अधिकतम
104W
ट्रान्जिस्टर-प्रकार
1 N-Channel
ड्रेन-टू-स्रोत-भोल्टेज-Vdss
100V
इनपुट-Capacitance-Ciss-Vds
2870pF @ 50V
FET - सुविधा
मानक
वर्तमान-निरन्तर-नाली-Id-25°C
60A (Tc)
Rds-on-max-Id-Vgs
14 mOhm @ 10A, 10V
Vgs-th-max-Id
4.5V @ 250μA
गेट-चार्ज-Qg-Vgs
72nC @ 10V
Pd-शक्ति-डिसिपेशन
6.25 W
अधिकतम-सञ्चालन-तापमान
+ 150 C
न्यूनतम-सञ्चालन-तापमान
- 55 C
पतन-समय
11 ns
उदय-समय
10 ns
Vgs-गेट-स्रोत-भोल्टेज
20 V
आईडी-निरन्तर-नाली-वर्तमान
14.9 A
Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज
100 V
Rds-अन-ड्रेन-स्रोत-प्रतिरोध
14 mOhms
ट्रान्जिस्टर-ध्रुवता
N- च्यानल
सामान्य-टर्न-अफ-ढिलाइ-समय
27 ns
सामान्य-टर्न-अन-डिले-समय
21 ns
च्यानल-मोड
वृद्धि
Tags
SI7178D, SI7178, SI717, SI71, SI7
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 100 V 0.014 Ohms Surface Mount Power Mosfet - PowerPAK SO-8
***ark
Mosfet, N Channel, 100V, 0.0114Ohm, 60A, Powerpak So, Full Reel; Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:60A; On Resistance Rds(On):0.0114Ohm; Transistor Mounting:surface Mount Rohs Compliant: Yes
***ment14 APAC
N CHANNEL MOSFET, 100V, 60A, PowerPAK; T; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:100V; On Resistance Rds(on):14mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:4.5V; Power Dissipation Pd:6.25W; Operating Temperature Range:-55°C to +150°C; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:60A; Junction Temperature Tj Max:150°C; Package / Case:PowerPAK; Power Dissipation Pd:104W; Power Dissipation Pd:6.25W; Rise Time:10ns; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:4.5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4.5V; Voltage Vgs th Min:2.5V
भाग # Mfg। विवरण स्टक मूल्य
SI7178DP-T1-GE3
DISTI # V72:2272_07433354		Vishay IntertechnologiesTrans MOSFET N-CH 100V 14.9A 8-Pin PowerPAK SO T/R
RoHS: Compliant		1502
  • 1000:$1.3300
  • 500:$1.5300
  • 250:$1.6250
  • 100:$1.8890
  • 25:$2.2500
  • 10:$2.2750
  • 1:$2.4870
SI7178DP-T1-GE3
DISTI # SI7178DP-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 100V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		27037In Stock
  • 1000:$1.3107
  • 500:$1.5818
  • 100:$2.0338
  • 10:$2.5310
  • 1:$2.8000
SI7178DP-T1-GE3
DISTI # SI7178DP-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 100V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		27037In Stock
  • 1000:$1.3107
  • 500:$1.5818
  • 100:$2.0338
  • 10:$2.5310
  • 1:$2.8000
SI7178DP-T1-GE3
DISTI # SI7178DP-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 100V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		27000In Stock
  • 3000:$1.1847
SI7178DP-T1-GE3
DISTI # 26154696		Vishay IntertechnologiesTrans MOSFET N-CH 100V 14.9A 8-Pin PowerPAK SO T/R
RoHS: Compliant		1502
  • 1000:$1.3300
  • 500:$1.5280
  • 250:$1.6230
  • 100:$1.8840
  • 25:$2.2430
  • 10:$2.2670
  • 5:$2.4770
SI7178DP-T1-GE3
DISTI # SI7178DP-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 100V 14.9A 8-Pin PowerPAK SO T/R - Cut TR (SOS) (Alt: SI7178DP-T1-GE3)
RoHS: Compliant
Min Qty: 1
Container: Cut Tape		Americas - 1580
  • 1:$1.1900
  • 30:$1.1900
  • 75:$1.1900
  • 150:$1.1900
  • 375:$1.1900
  • 750:$1.1900
  • 1500:$1.1900
SI7178DP-T1-GE3
DISTI # SI7178DP-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 100V 14.9A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7178DP-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 15000
  • 3000:$1.0900
  • 6000:$1.0900
  • 12000:$1.0900
  • 18000:$1.0900
  • 30000:$1.0900
SI7178DP-T1-GE3
DISTI # SI7178DP-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 100V 14.9A 8-Pin PowerPAK SO T/R (Alt: SI7178DP-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
    SI7178DP-T1-GE3
    DISTI # 16P3830    		Vishay IntertechnologiesN CHANNEL MOSFET, 100V, 60A, PowerPAK,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:100V,On Resistance Rds(on):14mohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:4.5V , RoHS Compliant: Yes0
    • 1:$3.2000
    • 25:$2.6500
    • 50:$2.4200
    • 100:$2.1800
    • 250:$2.1100
    • 500:$1.9000
    • 1000:$1.6000
    SI7178DP-T1-GE3.
    DISTI # 28AC2161    		Vishay IntertechnologiesN-CHANNEL 100-V (D-S) MOSFET , ROHS COMPLIANT: YES15000
    • 1:$1.5200
    • 3000:$1.5200
    SI7178DP-T1-GE3
    DISTI # 70026266    		Vishay SiliconixN-CHANNEL 100-V (D-S) MOSFET
    RoHS: Compliant    		0
    • 3000:$1.8300
    • 6000:$1.8200
    • 9000:$1.7200
    SI7178DP-T1-GE3
    DISTI # 781-SI7178DP-T1-GE3    		Vishay IntertechnologiesMOSFET 100V 60A 104W 14mohm @ 10V
    RoHS: Compliant    		4439
    • 1:$3.2000
    • 10:$2.6500
    • 100:$2.1800
    • 250:$2.1100
    • 500:$1.9000
    • 1000:$1.6000
    • 3000:$1.5200
    SI7178DP-T1-GE3Vishay IntertechnologiesSingle N-Channel 100 V 0.014 Ohms Surface Mount Power Mosfet - PowerPAK SO-8
    RoHS: Compliant    		12000Reel
    • 3000:$1.2000
    SI7178DP-T1-GE3
    DISTI # C1S803601192761    		Vishay IntertechnologiesMOSFETs
    RoHS: Compliant    		1502
    • 250:$1.6250
    • 25:$2.2500
    • 1:$2.4870
    SI7178DP-T1-GE3
    DISTI # XSFP00000108896    		Vishay Siliconix 
    RoHS: Compliant    		8076
    • 3000:$2.4000
    • 8076:$2.1800
    SI7178DP-T1-GE3Vishay IntertechnologiesMOSFET 100V 60A 104W 14mohm @ 10VAmericas - 15000
      छवि भाग # विवरण
      SI7178DP-T1-GE3

      Mfr.#: SI7178DP-T1-GE3

      OMO.#: OMO-SI7178DP-T1-GE3

      		 MOSFET 100V 60A 104W 14mohm @ 10V
      SI7178DP

      Mfr.#: SI7178DP

      OMO.#: OMO-SI7178DP-1190

      		 नयाँ र मौलिक
      SI7178DP-T3

      Mfr.#: SI7178DP-T3

      OMO.#: OMO-SI7178DP-T3-1190

      		 नयाँ र मौलिक
      SI7178DP-T1-GE3

      Mfr.#: SI7178DP-T1-GE3

      OMO.#: OMO-SI7178DP-T1-GE3-VISHAY

      		 Trans MOSFET N-CH 100V 14.9A 8-Pin PowerPAK SO T/R
      उपलब्धता
      स्टक:
      Available
      अर्डर मा:
      5000
      मात्रा प्रविष्ट गर्नुहोस्:
      SI7178DP-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
      सन्दर्भ मूल्य (USD)
      मात्रा
      एकाइ मूल्य
      विस्तार मूल्य
      1
      US$ १.५३
      US$ १.५३
      10
      US$ १.४६
      US$ १४.५८
      100
      US$ १.३८
      US$ १३८.०८
      500
      US$ १.३०
      US$ ६५२.०५
      1000
      US$ १.२३
      US$ १ २२७.४०
      बाट सुरु गर्नुहोस्
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