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BSZ130N03LS G

BSZ130N03LS G
Mfr. #:
BSZ130N03LS G
निर्माता:
Infineon Technologies
विवरण:
MOSFET N-Ch 30V 35A TSDSON-8 OptiMOS 3
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
BSZ130N03LS G डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
BSZ130N03LS G थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता
Infineon टेक्नोलोजीहरू
उत्पादन कोटि
FETs - एकल
शृङ्खला
OptiMOS
प्याकेजिङ
Digi-ReelR वैकल्पिक प्याकेजिङ
अंश-उपनामहरू
BSZ130N03LSGATMA1 BSZ130N03LSGXT SP000278810
माउन्टिङ-शैली
SMD/SMT
ट्रेडनेम
OptiMOS
प्याकेज-केस
8-PowerTDFN
प्रविधि
सि
सञ्चालन - तापक्रम
-55°C ~ 150°C (TJ)
माउन्टिङ-प्रकार
सतह माउन्ट
च्यानलहरूको संख्या
1 Channel
आपूर्तिकर्ता-उपकरण-प्याकेज
PG-TSDSON-8 (3.3x3.3)
कन्फिगरेसन
एकल क्वाड ड्रेन ट्रिपल स्रोत
FET-प्रकार
MOSFET एन-च्यानल, धातु अक्साइड
पावर-अधिकतम
25W
ट्रान्जिस्टर-प्रकार
1 N-Channel
ड्रेन-टू-स्रोत-भोल्टेज-Vdss
30V
इनपुट-Capacitance-Ciss-Vds
970pF @ 15V
FET - सुविधा
तर्क स्तर गेट
वर्तमान-निरन्तर-नाली-Id-25°C
10A (Ta), 35A (Tc)
Rds-on-max-Id-Vgs
13 mOhm @ 20A, 10V
Vgs-th-max-Id
2.2V @ 250μA
गेट-चार्ज-Qg-Vgs
13nC @ 10V
Pd-शक्ति-डिसिपेशन
2.1 W
अधिकतम-सञ्चालन-तापमान
+ 150 C
न्यूनतम-सञ्चालन-तापमान
- 55 C
पतन-समय
2.4 ns
उदय-समय
2.6 ns
Vgs-गेट-स्रोत-भोल्टेज
20 V
आईडी-निरन्तर-नाली-वर्तमान
35 A
Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज
30 V
Rds-अन-ड्रेन-स्रोत-प्रतिरोध
13 mOhms
ट्रान्जिस्टर-ध्रुवता
N- च्यानल
सामान्य-टर्न-अफ-ढिलाइ-समय
13 ns
सामान्य-टर्न-अन-डिले-समय
2.9 ns
च्यानल-मोड
वृद्धि
Tags
BSZ130N03L, BSZ13, BSZ1, BSZ
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
भाग # Mfg। विवरण स्टक मूल्य
BSZ130N03LSGATMA1
DISTI # BSZ130N03LSGATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 30V 35A TSDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		13364In Stock
  • 1000:$0.3082
  • 500:$0.3852
  • 100:$0.5200
  • 10:$0.6740
  • 1:$0.7700
BSZ130N03LSGATMA1
DISTI # BSZ130N03LSGATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 30V 35A TSDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		13364In Stock
  • 1000:$0.3082
  • 500:$0.3852
  • 100:$0.5200
  • 10:$0.6740
  • 1:$0.7700
BSZ130N03LSGATMA1
DISTI # BSZ130N03LSGATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 30V 35A TSDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		10000In Stock
  • 5000:$0.2525
BSZ130N03LSGATMA1
DISTI # SP000278810		Infineon Technologies AGTrans MOSFET N-CH 30V 35A 8-Pin TSDSON T/R (Alt: SP000278810)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Europe - 5000
  • 5000:€0.2679
  • 10000:€0.2189
  • 20000:€0.2009
  • 30000:€0.1849
  • 50000:€0.1719
BSZ130N03LSG
DISTI # BSZ130N03LS G		Infineon Technologies AGTrans MOSFET N-CH 30V 35A 8-Pin TSDSON T/R (Alt: BSZ130N03LS G)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Asia - 0
  • 5000:$0.1857
  • 10000:$0.1806
  • 15000:$0.1757
  • 25000:$0.1711
  • 50000:$0.1688
  • 125000:$0.1667
  • 250000:$0.1646
BSZ130N03LSG
DISTI # SP000278810		Infineon Technologies AGTrans MOSFET N-CH 30V 35A 8-Pin TSDSON T/R (Alt: SP000278810)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Europe - 0
  • 5000:€0.3189
  • 10000:€0.2749
  • 20000:€0.2339
  • 30000:€0.2009
  • 50000:€0.1899
BSZ130N03LSGATMA1
DISTI # BSZ130N03LSGATMA1		Infineon Technologies AGTrans MOSFET N-CH 30V 35A 8-Pin TSDSON T/R - Tape and Reel (Alt: BSZ130N03LSGATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.1949
  • 10000:$0.1879
  • 20000:$0.1819
  • 30000:$0.1749
  • 50000:$0.1719
BSZ130N03LSGATMA1
DISTI # 60R2543		Infineon Technologies AGMOSFET, N CH, 35A, 30V, PG-TSDSON-8,Transistor Polarity:N Channel,Continuous Drain Current Id:35A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0108ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:-,Power RoHS Compliant: Yes0
  • 1:$0.6760
  • 10:$0.5400
  • 100:$0.3650
  • 500:$0.3160
  • 1000:$0.2750
  • 2500:$0.2240
  • 10000:$0.2160
BSZ130N03LS G
DISTI # 726-BSZ130N03LSG		Infineon Technologies AGMOSFET N-Ch 30V 35A TSDSON-8 OptiMOS 3
RoHS: Compliant		8352
  • 1:$0.6400
  • 10:$0.5270
  • 100:$0.3400
  • 1000:$0.2720
  • 5000:$0.2300
BSZ130N03LSGInfineon Technologies AGPower Field-Effect Transistor, 10A I(D), 30V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		3430
  • 1000:$0.2200
  • 500:$0.2400
  • 100:$0.2500
  • 25:$0.2600
  • 1:$0.2800
BSZ130N03LSGATMA1Infineon Technologies AGPower Field-Effect Transistor, 10A I(D), 30V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		6507
  • 1000:$0.2100
  • 500:$0.2200
  • 100:$0.2300
  • 25:$0.2400
  • 1:$0.2600
BSZ130N03LSGATMA1
DISTI # 9062909P		Infineon Technologies AGMOSFET N-CHANNEL 30V 35A OPTIMOS TSDSON8, RL200
  • 80:£0.3140
  • 400:£0.2460
  • 800:£0.2220
  • 2000:£0.1970
BSZ130N03LSGInfineon Technologies AG 2897
    BSZ130N03LSGATMA1
    DISTI # XSKDRABS0003299    		Infineon Technologies AG 
    RoHS: Compliant    		5000
    • 5000:$0.2819
    BSZ130N03LSGATMA1
    DISTI # 1775506    		Infineon Technologies AGMOSFET, N CH, 35A, 30V, PG-TSDSON-8
    RoHS: Compliant    		4200
    • 5:£0.6440
    • 25:£0.5570
    • 100:£0.4200
    • 250:£0.3660
    • 500:£0.3120
    छवि भाग # विवरण
    BSZ130N03MS G

    Mfr.#: BSZ130N03MS G

    OMO.#: OMO-BSZ130N03MS-G

    		 MOSFET N-Ch 30V 35A TSDSON-8 OptiMOS 3M
    BSZ130N03MSGATMA1

    Mfr.#: BSZ130N03MSGATMA1

    OMO.#: OMO-BSZ130N03MSGATMA1

    		 MOSFET LV POWER MOS
    BSZ130N03LS G

    Mfr.#: BSZ130N03LS G

    OMO.#: OMO-BSZ130N03LS-G-1190

    		 MOSFET N-Ch 30V 35A TSDSON-8 OptiMOS 3
    BSZ130N03LSG

    Mfr.#: BSZ130N03LSG

    OMO.#: OMO-BSZ130N03LSG-1190

    		 Trans MOSFET N-CH 30V 35A 8-Pin TSDSON T/R (Alt: SP000278810)
    BSZ130N03LSGATMA1

    Mfr.#: BSZ130N03LSGATMA1

    OMO.#: OMO-BSZ130N03LSGATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 30V 35A TSDSON-8
    BSZ130N03M

    Mfr.#: BSZ130N03M

    OMO.#: OMO-BSZ130N03M-1190

    		 नयाँ र मौलिक
    BSZ130N03MS

    Mfr.#: BSZ130N03MS

    OMO.#: OMO-BSZ130N03MS-1190

    		 नयाँ र मौलिक
    BSZ130N03MS G

    Mfr.#: BSZ130N03MS G

    OMO.#: OMO-BSZ130N03MS-G-1190

    		 Trans MOSFET N-CH 30V 9A 8-Pin TSDSON T/R - Bulk (Alt: BSZ130N03MSG)
    BSZ130N03MSG

    Mfr.#: BSZ130N03MSG

    OMO.#: OMO-BSZ130N03MSG-1190

    		 Power Field-Effect Transistor, 9A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    BSZ130N03MSGATMA1

    Mfr.#: BSZ130N03MSGATMA1

    OMO.#: OMO-BSZ130N03MSGATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 30V 35A TSDSON-8
    उपलब्धता
    स्टक:
    Available
    अर्डर मा:
    5500
    मात्रा प्रविष्ट गर्नुहोस्:
    BSZ130N03LS G को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1
    US$ ०.३२
    US$ ०.३२
    10
    US$ ०.३०
    US$ ३.०४
    100
    US$ ०.२९
    US$ २८.७६
    500
    US$ ०.२७
    US$ १३५.८०
    1000
    US$ ०.२६
    US$ २५५.६०
    बाट सुरु गर्नुहोस्
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