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BSC016N06NSATMA1

BSC016N06NSATMA1
Mfr. #:
BSC016N06NSATMA1
निर्माता:
Infineon Technologies
विवरण:
MOSFET N-CH 60V 30A TDSON-8
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
BSC016N06NSATMA1 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
BSC016N06NSATMA1 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता
Infineon टेक्नोलोजीहरू
उत्पादन कोटि
ट्रान्जिस्टर - FETs, MOSFETs - एकल
शृङ्खला
OptiMOS
प्याकेजिङ
रील
अंश-उपनामहरू
BSC016N06NS BSC016N06NSXT SP000924882
माउन्टिङ-शैली
SMD/SMT
ट्रेडनेम
OptiMOS
प्याकेज-केस
TDSON-8
प्रविधि
सि
च्यानलहरूको संख्या
1 Channel
कन्फिगरेसन
एकल क्वाड ड्रेन ट्रिपल स्रोत
ट्रान्जिस्टर-प्रकार
1 N-Channel
Pd-शक्ति-डिसिपेशन
139 W
अधिकतम-सञ्चालन-तापमान
+ 150 C
न्यूनतम-सञ्चालन-तापमान
- 55 C
पतन-समय
9 ns
उदय-समय
9 ns
Vgs-गेट-स्रोत-भोल्टेज
20 V
आईडी-निरन्तर-नाली-वर्तमान
100 A
Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज
60 V
Vgs-th-गेट-स्रोत-थ्रेसहोल्ड-भोल्टेज
2.8 V
Rds-अन-ड्रेन-स्रोत-प्रतिरोध
1.6 mOhms
ट्रान्जिस्टर-ध्रुवता
N- च्यानल
सामान्य-टर्न-अफ-ढिलाइ-समय
35 ns
सामान्य-टर्न-अन-डिले-समय
19 ns
Qg-गेट-चार्ज
71 nC
फर्वार्ड-ट्रान्सकन्डक्टन्स-न्यूनतम
140 S / 70 S
Tags
BSC016N06, BSC016, BSC01, BSC0, BSC
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
20-60V OptiMOS Power MOSFETs
Infineon's 20-60V OptiMOS Power MOSFETs are innovative products that serve the market needs throughout the whole energy supply chain. OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). These devices consistently set the benchmark in key specifications for power system design, including leading on-state resistance and Figure of Merit characteristics which lead to reduced power losses and improved overall efficiency. These help customers that face the challenge of growing power demand, higher efficiency and lower cost.Learn More
भाग # Mfg। विवरण स्टक मूल्य
BSC016N06NSATMA1
DISTI # BSC016N06NSATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 60V 30A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		19997In Stock
  • 1000:$1.1500
  • 500:$1.3879
  • 100:$1.7845
  • 10:$2.2210
  • 1:$2.4600
BSC016N06NSATMA1
DISTI # BSC016N06NSATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 60V 30A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		19997In Stock
  • 1000:$1.1500
  • 500:$1.3879
  • 100:$1.7845
  • 10:$2.2210
  • 1:$2.4600
BSC016N06NSATMA1
DISTI # BSC016N06NSATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 60V 30A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		10000In Stock
  • 5000:$1.0010
BSC016N06NSATMA1
DISTI # BSC016N06NSATMA1		Infineon Technologies AGTrans MOSFET N-CH 60V 30A 8-Pin TDSON EP T/R - Tape and Reel (Alt: BSC016N06NSATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.8059
  • 10000:$0.7769
  • 20000:$0.7489
  • 30000:$0.7239
  • 50000:$0.7109
BSC016N06NSATMA1
DISTI # BSC016N06NS		Infineon Technologies AGTrans MOSFET N-CH 60V 30A 8-Pin TDSON EP T/R (Alt: BSC016N06NS)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Asia - 0
    BSC016N06NSATMA1
    DISTI # 79X1327    		Infineon Technologies AGMOSFET, N-CH, 60V, 100A, PG-TDSON- 8,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0014ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V RoHS Compliant: Yes0
    • 1:$2.0600
    • 10:$1.7700
    • 25:$1.6700
    • 50:$1.5600
    • 100:$1.4600
    • 250:$1.3500
    • 500:$1.3000
    • 1000:$1.2600
    BSC016N06NSATMA1.
    DISTI # 27AC1071    		Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0014ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V,Power Dissipation Pd:139W,No. of Pins:8Pins RoHS Compliant: Yes0
    • 1:$0.8060
    • 10000:$0.7770
    • 20000:$0.7490
    • 30000:$0.7240
    • 50000:$0.7110
    BSC016N06NS
    DISTI # 726-BSC016N06NS    		Infineon Technologies AGMOSFET N-Ch 60V 100A DSON-8 OptiMOS
    RoHS: Compliant    		143
    • 1:$2.0600
    • 10:$1.7500
    • 100:$1.4000
    • 500:$1.2300
    • 1000:$1.0200
    BSC016N06NSATMA1
    DISTI # 726-BSC016N06NSATMA1    		Infineon Technologies AGMOSFET N-Ch 60V 100A DSON-8 OptiMOS
    RoHS: Compliant    		0
    • 1:$2.0600
    • 10:$1.7500
    • 100:$1.4000
    • 500:$1.2300
    • 1000:$1.0200
    BSC016N06NSATMA1
    DISTI # 2432702    		Infineon Technologies AGMOSFET, N CH, 60V, 100A, TDSON-8
    RoHS: Compliant    		0
    • 1:£1.8900
    • 10:£1.4900
    • 100:£1.2000
    • 250:£1.1200
    • 500:£1.1000
    BSC016N06NSATMA1
    DISTI # 2432702    		Infineon Technologies AGMOSFET, N CH, 60V, 100A, TDSON-8
    RoHS: Compliant    		0
    • 1:$3.2600
    • 10:$2.7800
    • 100:$2.3300
    BSC016N06NSATMA1
    DISTI # 2432702RL    		Infineon Technologies AGMOSFET, N CH, 60V, 100A, TDSON-8
    RoHS: Compliant    		0
    • 1:$3.2600
    • 10:$2.7800
    • 100:$2.3300
    छवि भाग # विवरण
    BSC016N06NSATMA1

    Mfr.#: BSC016N06NSATMA1

    OMO.#: OMO-BSC016N06NSATMA1

    		 MOSFET N-Ch 60V 100A DSON-8 OptiMOS
    BSC016N04LS G

    Mfr.#: BSC016N04LS G

    OMO.#: OMO-BSC016N04LS-G

    		 MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3
    BSC016N04LSGATMA1

    Mfr.#: BSC016N04LSGATMA1

    OMO.#: OMO-BSC016N04LSGATMA1

    		 MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3
    BSC016N03LSGXT/BKN

    Mfr.#: BSC016N03LSGXT/BKN

    OMO.#: OMO-BSC016N03LSGXT-BKN-1190

    		 INSTOCK
    BSC016N03LSGXT

    Mfr.#: BSC016N03LSGXT

    OMO.#: OMO-BSC016N03LSGXT-1190

    		 MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3
    BSC016N03MS

    Mfr.#: BSC016N03MS

    OMO.#: OMO-BSC016N03MS-1190

    		 Transistor: N-MOSFET, unipolar, 30V, 100A, 125W, PG-TDSON-8
    BSC016N03MSG

    Mfr.#: BSC016N03MSG

    OMO.#: OMO-BSC016N03MSG-1190

    		 Power Field-Effect Transistor, 28A I(D), 30V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    BSC016N03MSGXT

    Mfr.#: BSC016N03MSGXT

    OMO.#: OMO-BSC016N03MSGXT-1190

    		 नयाँ र मौलिक
    BSC016N06NSATMA1

    Mfr.#: BSC016N06NSATMA1

    OMO.#: OMO-BSC016N06NSATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 60V 30A TDSON-8
    BSC016N06NSTATMA1

    Mfr.#: BSC016N06NSTATMA1

    OMO.#: OMO-BSC016N06NSTATMA1-INFINEON-TECHNOLOGIES

    		 DIFFERENTIATED MOSFETS
    उपलब्धता
    स्टक:
    Available
    अर्डर मा:
    1500
    मात्रा प्रविष्ट गर्नुहोस्:
    BSC016N06NSATMA1 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1
    US$ १.०७
    US$ १.०७
    10
    US$ १.०१
    US$ १०.१३
    100
    US$ ०.९६
    US$ ९५.९७
    500
    US$ ०.९१
    US$ ४५३.२०
    1000
    US$ ०.८५
    US$ ८५३.१०
    2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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