| Mfr. #: | ULN2004AIN |
|---|---|
| निर्माता: | Texas Instruments |
| विवरण: | Darlington Transistors HiVltg Hi-Current Darl Trans Array |
| जीवन चक्र: | यस निर्माताबाट नयाँ। |
| डाटा पाना: | ULN2004AIN डाटा पाना |
Product belongs to the ULN2004AI series. Tube is the packaging method for this product Weight of 0.033570 oz Through Hole Mounting-Style 16-DIP (0.300", 7.62mm) Through Hole mounting type Supplier device package: 16-PDIP Configuration Array 7 Transistor type: 7 NPN Darlington Maximum current collector Ic is 500mA . Maximum collector-emitter breakdown voltage of 50V DC current gain minimum (hFE) of Ic/Vce at -. Product Attribute: Vce-Saturation-Max-Ib-Ic: 1.6V @ 500μA, 350mA Maximum operating temperature of + 105 C Minimum operating temperature: - 40 C Rated VCEO up to 50 V The transistor polarity is NPN. Max DC collector current: 0.5 A
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
ULN2004AIN Specifications
A: At what frequency does the Series?
Q: The product Series is ULN2004AI.
A: What is the Packaging of the product?
Q: The Packaging of the product is Tube.
A: At what frequency does the Unit-Weight?
Q: The product Unit-Weight is 0.033570 oz.
A: Is the cutoff frequency of the product Mounting-Style?
Q: Yes, the product's Mounting-Style is indeed Through Hole
A: What is the Package-Case of the product?
Q: The Package-Case of the product is 16-DIP (0.300", 7.62mm).
A: At what frequency does the Mounting-Type?
Q: The product Mounting-Type is Through Hole.
A: At what frequency does the Supplier-Device-Package?
Q: The product Supplier-Device-Package is 16-PDIP.
A: What is the Configuration of the product?
Q: The Configuration of the product is Array 7.
A: What is the Transistor-Type of the product?
Q: The Transistor-Type of the product is 7 NPN Darlington.
A: What is the Current-Collector-Ic-Max of the product?
Q: The Current-Collector-Ic-Max of the product is 500mA.
A: At what frequency does the Voltage-Collector-Emitter-Breakdown-Max?
Q: The product Voltage-Collector-Emitter-Breakdown-Max is 50V.
A: Is the cutoff frequency of the product DC-Current-Gain-hFE-Min-Ic-Vce?
Q: Yes, the product's DC-Current-Gain-hFE-Min-Ic-Vce is indeed -
A: Is the cutoff frequency of the product Vce-Saturation-Max-Ib-Ic?
Q: Yes, the product's Vce-Saturation-Max-Ib-Ic is indeed 1.6V @ 500μA, 350mA
A: Is the cutoff frequency of the product Maximum-Operating-Temperature?
Q: Yes, the product's Maximum-Operating-Temperature is indeed + 105 C
A: At what frequency does the Minimum-Operating-Temperature?
Q: The product Minimum-Operating-Temperature is - 40 C.
A: What is the Collector-Emitter-Voltage-VCEO-Max of the product?
Q: The Collector-Emitter-Voltage-VCEO-Max of the product is 50 V.
A: At what frequency does the Transistor-Polarity?
Q: The product Transistor-Polarity is NPN.
A: What is the Maximum-DC-Collector-Current of the product?
Q: The Maximum-DC-Collector-Current of the product is 0.5 A.