TIP35C

TIP35C Overview

Product belongs to the 500V Transistors series. Tube is the packaging method for this product Weight of 0.229281 oz Through Hole Mounting-Style TO-247-3 Through Hole mounting type Supplier device package: TO-247-3 Configuration Single Transistor type: NPN Maximum current collector Ic is 25A . Maximum collector-emitter breakdown voltage of 100V DC current gain minimum (hFE) of Ic/Vce at 10 @ 15A, 4V. Product Attribute: Vce-Saturation-Max-Ib-Ic: 4V @ 5A, 25A Power-off control: 125 W Maximum operating temperature of + 150 C Minimum operating temperature: - 65 C Rated VCEO up to 100 V The transistor polarity is NPN. Saturation voltage between collector and emitter is 1.8 V The 100 V voltage rating is 40 V. 5 V rating of 5 V Max DC collector current: 25 A Gain-Bandwidth-Product: 3 MHz This product is capable of handling a 25 A continuous collector current. Minimum hfe for DC collector-base gain is 10. 50 of 605.

TIP35C Image

TIP35C Specifications

• Manufacturer STMicroelectronics
• Product Category Transistors (BJT) - Single
• Series 500V Transistors
• Packaging Tube
• Unit-Weight 0.229281 oz
• Mounting-Style Through Hole
• Package-Case TO-247-3
• Mounting-Type Through Hole
• Supplier-Device-Package TO-247-3
• Configuration Single
• Power-Max 125W
• Transistor-Type NPN
• Current-Collector-Ic-Max 25A
• Voltage-Collector-Emitter-Breakdown-Max 100V
• DC-Current-Gain-hFE-Min-Ic-Vce 10 @ 15A, 4V
• Vce-Saturation-Max-Ib-Ic 4V @ 5A, 25A
• Current-Collector-Cutoff-Max 1mA
• Frequency-Transition 3MHz
• Pd-Power-Dissipation 125 W
• Maximum-Operating-Temperature + 150 C
• Minimum-Operating-Temperature - 65 C
• Collector-Emitter-Voltage-VCEO-Max 100 V
• Transistor-Polarity NPN
• Collector-Emitter-Saturation-Voltage 1.8 V
• Collector-Base-Voltage-VCBO 100 V
• Emitter-Base-Voltage-VEBO 5 V
• Maximum-DC-Collector-Current 25 A
• Gain-Bandwidth-Product-fT 3 MHz
• Continuous-Collector-Current 25 A
• DC-Collector-Base-Gain-hfe-Min 10
• DC-Current-Gain-hFE-Max 50

TIP35C FAQ

• A: At what frequency does the Series?

  Q: The product Series is 500V Transistors.

• A: Is the cutoff frequency of the product Packaging?

  Q: Yes, the product's Packaging is indeed Tube

• A: What is the Unit-Weight of the product?

  Q: The Unit-Weight of the product is 0.229281 oz.

• A: At what frequency does the Mounting-Style?

  Q: The product Mounting-Style is Through Hole.

• A: At what frequency does the Package-Case?

  Q: The product Package-Case is TO-247-3.

• A: What is the Mounting-Type of the product?

  Q: The Mounting-Type of the product is Through Hole.

• A: At what frequency does the Supplier-Device-Package?

  Q: The product Supplier-Device-Package is TO-247-3.

• A: Is the cutoff frequency of the product Configuration?

  Q: Yes, the product's Configuration is indeed Single

• A: Is the cutoff frequency of the product Transistor-Type?

  Q: Yes, the product's Transistor-Type is indeed NPN

• A: Is the cutoff frequency of the product Current-Collector-Ic-Max?

  Q: Yes, the product's Current-Collector-Ic-Max is indeed 25A

• A: Is the cutoff frequency of the product Voltage-Collector-Emitter-Breakdown-Max?

  Q: Yes, the product's Voltage-Collector-Emitter-Breakdown-Max is indeed 100V

• A: Is the cutoff frequency of the product DC-Current-Gain-hFE-Min-Ic-Vce?

  Q: Yes, the product's DC-Current-Gain-hFE-Min-Ic-Vce is indeed 10 @ 15A, 4V

• A: What is the Vce-Saturation-Max-Ib-Ic of the product?

  Q: The Vce-Saturation-Max-Ib-Ic of the product is 4V @ 5A, 25A.

• A: What is the Pd-Power-Dissipation of the product?

  Q: The Pd-Power-Dissipation of the product is 125 W.

• A: What is the Maximum-Operating-Temperature of the product?

  Q: The Maximum-Operating-Temperature of the product is + 150 C.

• A: What is the Minimum-Operating-Temperature of the product?

  Q: The Minimum-Operating-Temperature of the product is - 65 C.

• A: Is the cutoff frequency of the product Collector-Emitter-Voltage-VCEO-Max?

  Q: Yes, the product's Collector-Emitter-Voltage-VCEO-Max is indeed 100 V

• A: What is the Transistor-Polarity of the product?

  Q: The Transistor-Polarity of the product is NPN.

• A: Is the cutoff frequency of the product Collector-Emitter-Saturation-Voltage?

  Q: Yes, the product's Collector-Emitter-Saturation-Voltage is indeed 1.8 V

• A: What is the Collector-Base-Voltage-VCBO of the product?

  Q: The Collector-Base-Voltage-VCBO of the product is 100 V.

• A: What is the Emitter-Base-Voltage-VEBO of the product?

  Q: The Emitter-Base-Voltage-VEBO of the product is 5 V.

• A: Is the cutoff frequency of the product Maximum-DC-Collector-Current?

  Q: Yes, the product's Maximum-DC-Collector-Current is indeed 25 A

• A: Is the cutoff frequency of the product Gain-Bandwidth-Product-fT?

  Q: Yes, the product's Gain-Bandwidth-Product-fT is indeed 3 MHz

• A: Is the cutoff frequency of the product Continuous-Collector-Current?

  Q: Yes, the product's Continuous-Collector-Current is indeed 25 A

• A: Is the cutoff frequency of the product DC-Collector-Base-Gain-hfe-Min?

  Q: Yes, the product's DC-Collector-Base-Gain-hfe-Min is indeed 10

• A: At what frequency does the DC-Current-Gain-hFE-Max?

  Q: The product DC-Current-Gain-hFE-Max is 50.