STW88N65M5

STW88N65M5 Overview

Product belongs to the MDmesh V series. Tube is the packaging method for this product Weight of 1.340411 oz Through Hole Mounting-Style TO-247-3 Si is the technology used. Operational temperature range: 150°C (TJ) Through Hole mounting type Number of channels: 1 Channel Supplier device package: TO-247-3 Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 650V This product has an 8825pF @ 100V value of 300pF @ 25V. This product's Standard. 84A (Tc) continuous drain-ID current at 25°C; This product has an 29 mOhm @ 42A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 450 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product's 25 V. The ID of continuous drain current is 84 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 650 V. The 29 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 204 nC. This product operates in Enhancement channel mode for optimal performance.

STW88N65M5 Image

STW88N65M5 Specifications

• Manufacturer STMicroelectronics
• Product Category IC Chips
• Series MDmesh V
• Packaging Tube
• Unit-Weight 1.340411 oz
• Mounting-Style Through Hole
• Package-Case TO-247-3
• Technology Si
• Operating-Temperature 150°C (TJ)
• Mounting-Type Through Hole
• Number-of-Channels 1 Channel
• Supplier-Device-Package TO-247-3
• Configuration Single
• FET-Type MOSFET N-Channel, Metal Oxide
• Power-Max 450W
• Transistor-Type 1 N-Channel
• Drain-to-Source-Voltage-Vdss 650V
• Input-Capacitance-Ciss-Vds 8825pF @ 100V
• FET-Feature Standard
• Current-Continuous-Drain-Id-25°C 84A (Tc)
• Rds-On-Max-Id-Vgs 29 mOhm @ 42A, 10V
• Vgs-th-Max-Id 5V @ 250μA
• Gate-Charge-Qg-Vgs 204nC @ 10V
• Pd-Power-Dissipation 450 W
• Maximum-Operating-Temperature + 150 C
• Minimum-Operating-Temperature - 55 C
• Vgs-Gate-Source-Voltage 25 V
• Id-Continuous-Drain-Current 84 A
• Vds-Drain-Source-Breakdown-Voltage 650 V
• Rds-On-Drain-Source-Resistance 29 mOhms
• Transistor-Polarity N-Channel
• Qg-Gate-Charge 204 nC
• Channel-Mode Enhancement

STW88N65M5 FAQ

• A: Is the cutoff frequency of the product Series?

  Q: Yes, the product's Series is indeed MDmesh V

• A: What is the Packaging of the product?

  Q: The Packaging of the product is Tube.

• A: At what frequency does the Unit-Weight?

  Q: The product Unit-Weight is 1.340411 oz.

• A: What is the Mounting-Style of the product?

  Q: The Mounting-Style of the product is Through Hole.

• A: Is the cutoff frequency of the product Package-Case?

  Q: Yes, the product's Package-Case is indeed TO-247-3

• A: Is the cutoff frequency of the product Technology?

  Q: Yes, the product's Technology is indeed Si

• A: At what frequency does the Operating-Temperature?

  Q: The product Operating-Temperature is 150°C (TJ).

• A: At what frequency does the Mounting-Type?

  Q: The product Mounting-Type is Through Hole.

• A: At what frequency does the Number-of-Channels?

  Q: The product Number-of-Channels is 1 Channel.

• A: At what frequency does the Supplier-Device-Package?

  Q: The product Supplier-Device-Package is TO-247-3.

• A: What is the Configuration of the product?

  Q: The Configuration of the product is Single.

• A: What is the FET-Type of the product?

  Q: The FET-Type of the product is MOSFET N-Channel, Metal Oxide.

• A: What is the Transistor-Type of the product?

  Q: The Transistor-Type of the product is 1 N-Channel.

• A: At what frequency does the Drain-to-Source-Voltage-Vdss?

  Q: The product Drain-to-Source-Voltage-Vdss is 650V.

• A: At what frequency does the Input-Capacitance-Ciss-Vds?

  Q: The product Input-Capacitance-Ciss-Vds is 8825pF @ 100V.

• A: At what frequency does the FET-Feature?

  Q: The product FET-Feature is Standard.

• A: What is the Current-Continuous-Drain-Id-25°C of the product?

  Q: The Current-Continuous-Drain-Id-25°C of the product is 84A (Tc).

• A: At what frequency does the Rds-On-Max-Id-Vgs?

  Q: The product Rds-On-Max-Id-Vgs is 29 mOhm @ 42A, 10V.

• A: What is the Pd-Power-Dissipation of the product?

  Q: The Pd-Power-Dissipation of the product is 450 W.

• A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

  Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

• A: At what frequency does the Minimum-Operating-Temperature?

  Q: The product Minimum-Operating-Temperature is - 55 C.

• A: What is the Vgs-Gate-Source-Voltage of the product?

  Q: The Vgs-Gate-Source-Voltage of the product is 25 V.

• A: At what frequency does the Id-Continuous-Drain-Current?

  Q: The product Id-Continuous-Drain-Current is 84 A.

• A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

  Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 650 V

• A: At what frequency does the Rds-On-Drain-Source-Resistance?

  Q: The product Rds-On-Drain-Source-Resistance is 29 mOhms.

• A: Is the cutoff frequency of the product Transistor-Polarity?

  Q: Yes, the product's Transistor-Polarity is indeed N-Channel

• A: Is the cutoff frequency of the product Qg-Gate-Charge?

  Q: Yes, the product's Qg-Gate-Charge is indeed 204 nC

• A: What is the Channel-Mode of the product?

  Q: The Channel-Mode of the product is Enhancement.