STW78N65M5

Mfr. #: STW78N65M5
निर्माता: STMicroelectronics
विवरण: MOSFET N-CH 650V 69A TO247
जीवन चक्र: यस निर्माताबाट नयाँ।
डाटा पाना: STW78N65M5 डाटा पाना
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STW78N65M5 Overview

Product belongs to the MDmesh V series. Tube is the packaging method for this product Weight of 1.340411 oz Through Hole Mounting-Style Trade name: MDmesh. TO-247-3 Si is the technology used. Operational temperature range: 150°C (TJ) Through Hole mounting type Number of channels: 1 Channel Supplier device package: TO-247 Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 650V This product has an 9000pF @ 100V value of 300pF @ 25V. This product's Standard. 69A (Tc) continuous drain-ID current at 25°C; This product has an 32 mOhm @ 34.5A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 450 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 14 ns of 16 ns. This product has a 14 ns of 16 ns. This product's 25 V. The ID of continuous drain current is 69 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 650 V. This product has a 4 V Vgs-th gate-source threshold voltage for efficient power management. The 24 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 203 nC. This product operates in Enhancement channel mode for optimal performance.

STW78N65M5 Image

STW78N65M5

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STW78N65M5 Specifications
  • Manufacturer STMicroelectronics
  • Product Category FETs - Single
  • Series MDmesh V
  • Packaging Tube
  • Unit-Weight 1.340411 oz
  • Mounting-Style Through Hole
  • Tradename MDmesh
  • Package-Case TO-247-3
  • Technology Si
  • Operating-Temperature 150°C (TJ)
  • Mounting-Type Through Hole
  • Number-of-Channels 1 Channel
  • Supplier-Device-Package TO-247
  • Configuration Single
  • FET-Type MOSFET N-Channel, Metal Oxide
  • Power-Max 450W
  • Transistor-Type 1 N-Channel
  • Drain-to-Source-Voltage-Vdss 650V
  • Input-Capacitance-Ciss-Vds 9000pF @ 100V
  • FET-Feature Standard
  • Current-Continuous-Drain-Id-25°C 69A (Tc)
  • Rds-On-Max-Id-Vgs 32 mOhm @ 34.5A, 10V
  • Vgs-th-Max-Id 5V @ 250μA
  • Gate-Charge-Qg-Vgs 203nC @ 10V
  • Pd-Power-Dissipation 450 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 14 ns
  • Rise-Time 14 ns
  • Vgs-Gate-Source-Voltage 25 V
  • Id-Continuous-Drain-Current 69 A
  • Vds-Drain-Source-Breakdown-Voltage 650 V
  • Vgs-th-Gate-Source-Threshold-Voltage 4 V
  • Rds-On-Drain-Source-Resistance 24 mOhms
  • Transistor-Polarity N-Channel
  • Qg-Gate-Charge 203 nC
  • Channel-Mode Enhancement

STW78N65M5

STW78N65M5 Specifications

STW78N65M5 FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed MDmesh V

  • A: Is the cutoff frequency of the product Packaging?

    Q: Yes, the product's Packaging is indeed Tube

  • A: At what frequency does the Unit-Weight?

    Q: The product Unit-Weight is 1.340411 oz.

  • A: At what frequency does the Mounting-Style?

    Q: The product Mounting-Style is Through Hole.

  • A: Is the cutoff frequency of the product Tradename?

    Q: Yes, the product's Tradename is indeed MDmesh

  • A: Is the cutoff frequency of the product Package-Case?

    Q: Yes, the product's Package-Case is indeed TO-247-3

  • A: Is the cutoff frequency of the product Technology?

    Q: Yes, the product's Technology is indeed Si

  • A: At what frequency does the Operating-Temperature?

    Q: The product Operating-Temperature is 150°C (TJ).

  • A: Is the cutoff frequency of the product Mounting-Type?

    Q: Yes, the product's Mounting-Type is indeed Through Hole

  • A: What is the Number-of-Channels of the product?

    Q: The Number-of-Channels of the product is 1 Channel.

  • A: Is the cutoff frequency of the product Supplier-Device-Package?

    Q: Yes, the product's Supplier-Device-Package is indeed TO-247

  • A: At what frequency does the Configuration?

    Q: The product Configuration is Single.

  • A: What is the FET-Type of the product?

    Q: The FET-Type of the product is MOSFET N-Channel, Metal Oxide.

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is 1 N-Channel.

  • A: Is the cutoff frequency of the product Drain-to-Source-Voltage-Vdss?

    Q: Yes, the product's Drain-to-Source-Voltage-Vdss is indeed 650V

  • A: What is the Input-Capacitance-Ciss-Vds of the product?

    Q: The Input-Capacitance-Ciss-Vds of the product is 9000pF @ 100V.

  • A: What is the FET-Feature of the product?

    Q: The FET-Feature of the product is Standard.

  • A: What is the Current-Continuous-Drain-Id-25°C of the product?

    Q: The Current-Continuous-Drain-Id-25°C of the product is 69A (Tc).

  • A: At what frequency does the Rds-On-Max-Id-Vgs?

    Q: The product Rds-On-Max-Id-Vgs is 32 mOhm @ 34.5A, 10V.

  • A: At what frequency does the Pd-Power-Dissipation?

    Q: The product Pd-Power-Dissipation is 450 W.

  • A: At what frequency does the Maximum-Operating-Temperature?

    Q: The product Maximum-Operating-Temperature is + 150 C.

  • A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

    Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C

  • A: Is the cutoff frequency of the product Fall-Time?

    Q: Yes, the product's Fall-Time is indeed 14 ns

  • A: What is the Rise-Time of the product?

    Q: The Rise-Time of the product is 14 ns.

  • A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

    Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 25 V

  • A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

    Q: Yes, the product's Id-Continuous-Drain-Current is indeed 69 A

  • A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

    Q: The product Vds-Drain-Source-Breakdown-Voltage is 650 V.

  • A: At what frequency does the Vgs-th-Gate-Source-Threshold-Voltage?

    Q: The product Vgs-th-Gate-Source-Threshold-Voltage is 4 V.

  • A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

    Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 24 mOhms

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed N-Channel

  • A: What is the Qg-Gate-Charge of the product?

    Q: The Qg-Gate-Charge of the product is 203 nC.

  • A: At what frequency does the Channel-Mode?

    Q: The product Channel-Mode is Enhancement.

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