| Mfr. #: | STW77N65M5 |
|---|---|
| निर्माता: | STMicroelectronics |
| विवरण: | MOSFET N-CH 650V 69A TO-247 |
| जीवन चक्र: | यस निर्माताबाट नयाँ। |
| डाटा पाना: | STW77N65M5 डाटा पाना |


Product belongs to the MDmesh V series. Tube is the packaging method for this product Weight of 1.340411 oz Through Hole Mounting-Style TO-247-3 Si is the technology used. Operational temperature range: 150°C (TJ) Through Hole mounting type Supplier device package: TO-247-3 This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. 650V This product has an 9800pF @ 100V value of 300pF @ 25V. This product's Standard. 69A (Tc) continuous drain-ID current at 25°C; This product has an 38 mOhm @ 34.5A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 400 W Maximum operating temperature of + 125 C Minimum operating temperature: - 55 C This product's 25 V. The ID of continuous drain current is 69 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 650 V. This product has a 4 V Vgs-th gate-source threshold voltage for efficient power management. The 30 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 200 nC.

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STW77N65M5 Specifications
A: At what frequency does the Series?
Q: The product Series is MDmesh V.
A: At what frequency does the Packaging?
Q: The product Packaging is Tube.
A: At what frequency does the Unit-Weight?
Q: The product Unit-Weight is 1.340411 oz.
A: At what frequency does the Mounting-Style?
Q: The product Mounting-Style is Through Hole.
A: At what frequency does the Package-Case?
Q: The product Package-Case is TO-247-3.
A: At what frequency does the Technology?
Q: The product Technology is Si.
A: Is the cutoff frequency of the product Operating-Temperature?
Q: Yes, the product's Operating-Temperature is indeed 150°C (TJ)
A: What is the Mounting-Type of the product?
Q: The Mounting-Type of the product is Through Hole.
A: What is the Supplier-Device-Package of the product?
Q: The Supplier-Device-Package of the product is TO-247-3.
A: Is the cutoff frequency of the product FET-Type?
Q: Yes, the product's FET-Type is indeed MOSFET N-Channel, Metal Oxide
A: What is the Drain-to-Source-Voltage-Vdss of the product?
Q: The Drain-to-Source-Voltage-Vdss of the product is 650V.
A: At what frequency does the Input-Capacitance-Ciss-Vds?
Q: The product Input-Capacitance-Ciss-Vds is 9800pF @ 100V.
A: At what frequency does the FET-Feature?
Q: The product FET-Feature is Standard.
A: At what frequency does the Current-Continuous-Drain-Id-25°C?
Q: The product Current-Continuous-Drain-Id-25°C is 69A (Tc).
A: At what frequency does the Rds-On-Max-Id-Vgs?
Q: The product Rds-On-Max-Id-Vgs is 38 mOhm @ 34.5A, 10V.
A: Is the cutoff frequency of the product Pd-Power-Dissipation?
Q: Yes, the product's Pd-Power-Dissipation is indeed 400 W
A: Is the cutoff frequency of the product Maximum-Operating-Temperature?
Q: Yes, the product's Maximum-Operating-Temperature is indeed + 125 C
A: What is the Minimum-Operating-Temperature of the product?
Q: The Minimum-Operating-Temperature of the product is - 55 C.
A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?
Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 25 V
A: What is the Id-Continuous-Drain-Current of the product?
Q: The Id-Continuous-Drain-Current of the product is 69 A.
A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?
Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 650 V.
A: At what frequency does the Vgs-th-Gate-Source-Threshold-Voltage?
Q: The product Vgs-th-Gate-Source-Threshold-Voltage is 4 V.
A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?
Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 30 mOhms
A: Is the cutoff frequency of the product Transistor-Polarity?
Q: Yes, the product's Transistor-Polarity is indeed N-Channel
A: Is the cutoff frequency of the product Qg-Gate-Charge?
Q: Yes, the product's Qg-Gate-Charge is indeed 200 nC