STW77N65M5

Mfr. #: STW77N65M5
निर्माता: STMicroelectronics
विवरण: MOSFET N-CH 650V 69A TO-247
जीवन चक्र: यस निर्माताबाट नयाँ।
डाटा पाना: STW77N65M5 डाटा पाना
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STW77N65M5 Overview

Product belongs to the MDmesh V series. Tube is the packaging method for this product Weight of 1.340411 oz Through Hole Mounting-Style TO-247-3 Si is the technology used. Operational temperature range: 150°C (TJ) Through Hole mounting type Supplier device package: TO-247-3 This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. 650V This product has an 9800pF @ 100V value of 300pF @ 25V. This product's Standard. 69A (Tc) continuous drain-ID current at 25°C; This product has an 38 mOhm @ 34.5A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 400 W Maximum operating temperature of + 125 C Minimum operating temperature: - 55 C This product's 25 V. The ID of continuous drain current is 69 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 650 V. This product has a 4 V Vgs-th gate-source threshold voltage for efficient power management. The 30 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 200 nC.

STW77N65M5 Image

STW77N65M5

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STW77N65M5 Specifications
  • Manufacturer ST
  • Product Category IC Chips
  • Series MDmesh V
  • Packaging Tube
  • Unit-Weight 1.340411 oz
  • Mounting-Style Through Hole
  • Package-Case TO-247-3
  • Technology Si
  • Operating-Temperature 150°C (TJ)
  • Mounting-Type Through Hole
  • Supplier-Device-Package TO-247-3
  • FET-Type MOSFET N-Channel, Metal Oxide
  • Power-Max 400W
  • Drain-to-Source-Voltage-Vdss 650V
  • Input-Capacitance-Ciss-Vds 9800pF @ 100V
  • FET-Feature Standard
  • Current-Continuous-Drain-Id-25°C 69A (Tc)
  • Rds-On-Max-Id-Vgs 38 mOhm @ 34.5A, 10V
  • Vgs-th-Max-Id 5V @ 250μA
  • Gate-Charge-Qg-Vgs 200nC @ 10V
  • Pd-Power-Dissipation 400 W
  • Maximum-Operating-Temperature + 125 C
  • Minimum-Operating-Temperature - 55 C
  • Vgs-Gate-Source-Voltage 25 V
  • Id-Continuous-Drain-Current 69 A
  • Vds-Drain-Source-Breakdown-Voltage 650 V
  • Vgs-th-Gate-Source-Threshold-Voltage 4 V
  • Rds-On-Drain-Source-Resistance 30 mOhms
  • Transistor-Polarity N-Channel
  • Qg-Gate-Charge 200 nC

STW77N65M5

STW77N65M5 Specifications

STW77N65M5 FAQ
  • A: At what frequency does the Series?

    Q: The product Series is MDmesh V.

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Tube.

  • A: At what frequency does the Unit-Weight?

    Q: The product Unit-Weight is 1.340411 oz.

  • A: At what frequency does the Mounting-Style?

    Q: The product Mounting-Style is Through Hole.

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is TO-247-3.

  • A: At what frequency does the Technology?

    Q: The product Technology is Si.

  • A: Is the cutoff frequency of the product Operating-Temperature?

    Q: Yes, the product's Operating-Temperature is indeed 150°C (TJ)

  • A: What is the Mounting-Type of the product?

    Q: The Mounting-Type of the product is Through Hole.

  • A: What is the Supplier-Device-Package of the product?

    Q: The Supplier-Device-Package of the product is TO-247-3.

  • A: Is the cutoff frequency of the product FET-Type?

    Q: Yes, the product's FET-Type is indeed MOSFET N-Channel, Metal Oxide

  • A: What is the Drain-to-Source-Voltage-Vdss of the product?

    Q: The Drain-to-Source-Voltage-Vdss of the product is 650V.

  • A: At what frequency does the Input-Capacitance-Ciss-Vds?

    Q: The product Input-Capacitance-Ciss-Vds is 9800pF @ 100V.

  • A: At what frequency does the FET-Feature?

    Q: The product FET-Feature is Standard.

  • A: At what frequency does the Current-Continuous-Drain-Id-25°C?

    Q: The product Current-Continuous-Drain-Id-25°C is 69A (Tc).

  • A: At what frequency does the Rds-On-Max-Id-Vgs?

    Q: The product Rds-On-Max-Id-Vgs is 38 mOhm @ 34.5A, 10V.

  • A: Is the cutoff frequency of the product Pd-Power-Dissipation?

    Q: Yes, the product's Pd-Power-Dissipation is indeed 400 W

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 125 C

  • A: What is the Minimum-Operating-Temperature of the product?

    Q: The Minimum-Operating-Temperature of the product is - 55 C.

  • A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

    Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 25 V

  • A: What is the Id-Continuous-Drain-Current of the product?

    Q: The Id-Continuous-Drain-Current of the product is 69 A.

  • A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

    Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 650 V.

  • A: At what frequency does the Vgs-th-Gate-Source-Threshold-Voltage?

    Q: The product Vgs-th-Gate-Source-Threshold-Voltage is 4 V.

  • A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

    Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 30 mOhms

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed N-Channel

  • A: Is the cutoff frequency of the product Qg-Gate-Charge?

    Q: Yes, the product's Qg-Gate-Charge is indeed 200 nC

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